We report on an 8-bit successive approximation analog-to-digital converter (SA-ADC) that was designed and fabricated in 0.5m silicon on sapphire CMOS technology. The SA-ADC is capable of 32-MHz operation, providing 1.23-MS/s conversion rates, and consumes 800 W at 3.3-V supply. The lack of substrate parasitic capacitances enables the use of small-area capacitors and reduces the noise coupling t...

Baseband front-end amplifiers operating from DC to several GHz are required from high speed optical transmission systems. Classical direct-coupled baseband transimpedance amplifiers have high gain but their high frequency performance is limited by the parasitic capacitances of the transistors. Their upper frequency limit is empirically known to achieve only a 30% of the transition frequency (fT...

The trans-admittance-mode (TAM) might act as a transforming bridge for voltage-mode to current-mode conversion. In this study a new low voltage operated electronically tunable TAM biquad filter structure realizing all the seven standard filtering functions namely; low-pass (LP), band-pass (BP), high-pass (HP), regular-notch (RN), low-pass-notch (LPN), high-pass-notch (HPN) and all-pass (AP) fro...

The snapback breakdown behavior of multi-finger MOSFETs was investigated using a device simulation. It is shown that voltage (SNBV) varies depending on the source/drain configuration, even with same two-finger structure. This results from hole current crowding below shared source, which further increases forward biasing at source-substrate junction and eventually leads to premature activation p...

After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on SiC-MOSFET half-bridge modules. Then, this model, cause voltage during commutation is analyzed. Finally, short-loop modulation strategy proposed under full working conditions ANPC. The con...

In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, mode that turn off Si prior MOSFET is generally adopted achieved zero-voltage operation IGBT. The minority carrier in N-base region are recombined form exponential attenuation due conductivity modulation effect. When turned off, if recombination process not finished, it needs bear a large collector–emitter volta...

This paper focuses on the impact of variation in thickness oxide (SiO2) layer performance parameters a FinFET analysed by varying range 0.8nm to 3nm. While thickness, overall width is fixed at value 30nm, and are for structures with different thickness. The like drain current, transconductance, transconductance generation factor, parasitic capacitances, output conductance, cut-off frequency, ma...

The theoretical efficiency of the class E frequency multiplier with arbitrary output can reach 100% by controlling phase current to satisfy ZVS/ZVDS condition. It is necessary select appropriate value shunt capacitance for satisfying these two conditions. In general, transistor consists linear external and nonlinear parasitic capacitance. Therefore, conventional design method treating as purely...