In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped...

Precise measurement and characterization of electrostatic potential structures and the concomitant electric fields at nanodimensions are essential to understand and control the properties of modern materials and devices. However, directly observing and measuring such local electric field information is still a major challenge in microscopy. Here, differential phase contrast imaging in scanning ...

Semiconductor ZnO aerogels were synthesized by a sol–gel process with different concentrations (2.5–7.5 wt.%) of Al (n-type) or Na (p-type) and dried under supercritical CO2. The materials calcined at 500 °C to remove the organic content crystallize ZnO. microstructure ZnO-based comprises porous structure hexagonal platelet-shaped interconnected particles. bandgap doped decreased significantly ...

Objective(s): The energy resolution of a cadmium-zinc-telluride (CZT) solid-state semiconductor detector is about 5%, and is superior to the resolution of the conventional Anger type detector which is 10%. Also, the window width of the high-energy part and of the low-energy part of a photo peak window can be changed separately. In this study, we used a semiconductor detector and examined the ef...

Nanostructure-decorated n-type semiconductor interfaces are studied in order to develop chemical sensing with nanostructured materials. We couple the tenets of acid/base chemistry with the majority charge carriers of an extrinsic semiconductor. Nanostructured islands are deposited in a process that does not require self-assembly in order to direct a dominant electron-transduction process that f...

Thin-film dye-sensitized solar cells (DSCs) based on mesoporous semiconductor electrodes are low-cost alternatives to conventional silicon devices. High-efficiency DSCs typically operate as photoanodes (n-DSCs), where photocurrents result from dye-sensitized electron injection into n-type semiconductors. Dye-sensitized photocathodes (p-DSCs) operate in an inverse mode, where dye-excitation is f...

DOI: 10.1002/aenm.201601863 level of recombination suppression at the rear surface. When Al is directly deposited on n-type c-Si, however, and even if it is not alloyed with the silicon, the contact behaves in a rectifying fashion and is associated with a high contact resistance, despite the small difference (≈0.1–0.2 eV) that exists between the Al work function and the electron affinity of sil...

In this paper, we describe the fixed locus of a symplectic involution on hyper-Kähler manifold type K 3 [ n ] $K3^{[n]}$ or Kummer $n$ type. We prove that consists finitely many copies deformations Hilbert schemes $K3$ surfaces lower dimensions and isolated points.

Heterojunction GaN/MoSe2 has recently piqued the interest of researchers due to its exceptional electronic and optical properties. Despite this, higher rate photogenerated carrier recombination limits their technical application. Implementing a promising approach formation 2D heterostructure with vacancies may improve photocatalytic activity. By first-principles, stability, structure, propertie...