We have calculated key characteristics of associative (content-addressable) spatial-temporal memories based on neuromorphic networks with restricted connectivity—“CrossNets.” Such networks may be naturally implemented in nanoelectronic hardware using hybrid memristive circuits, which may feature extremely high energy efficiency, approaching that of biological cortical circuits, at much higher o...

Electric programmability has been the basis for decades of advances in integrated computer component performance. However, once fabricated or assembled, such components—whether blade servers in a data center or microprocessors on a circuit board—are typically stuck in place and require human intervention for reconfiguration, removal, or replacement. For continued advances at the architectural l...

Brillouin light scattering (BLS) and picosecond laser ultrasonics (PLU) are two noncontact optical techniques that have garnered significant interest for thin film elastic constant measurements. PLU and BLS measurements were utilized to determine the elastic constants of 100 to 500 nm thick nanoporous low-k dielectric materials of significant interest for reducing capacitive delays in nanoelect...

The possibilities and conditions for modifying the band gap behavior of interband transitions under compressive tensile strains in crystal lattice a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on value direction compound may be direct-gap or indirect-gap semiconductor, such transformations are determined. results demonstrate potential ...

We have calculated the key characteristics of associative (content-addressable) spatial-temporal memories based on neuromorphic networks with restricted connectivity -"CrossNets". Such networks may be naturally implemented in nanoelectronic hardware using hybrid CMOS/memristor circuits, which may feature extremely high energy efficiency, approaching that of biological cortical circuits, at much...

Self-assembly (‘building’) approaches can provide well-controlled structures and assemblies at the nanometer scale, but typically do not provide the specific structures or functionalities required for robust nanoelectronic circuits. One approach to realize high-density nanoelectronic circuits is to combine self-assembly techniques with more conventional semiconductor device and circuit approach...