Thin ~equivalent oxide thickness Teq of 2.4 nm! silicon nitride layers were deposited on Si substrates by an atomic-layer-deposition ~ALD! technique at low temperatures ~,550 °C!. The interface state density at the ALD silicon nitride/Si-substrate interface was almost the same as that of the gate SiO2. No hysteresis was observed in the gate capacitance–gate voltage characteristics. The gate lea...

Carbon nanotubes (CNTs) were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. Th...

This review summarizes our most recent ndings in the structure and properties of amorphous and crystalline carbon nitride coatings, synthesized by reactive magnetron sputtering. By careful control of the plasma conditions via proper choice of process parameters such as substrate bias, target power and gas pressure, one can precisely control lm structure and properties. With this approach, we we...

The nucleation of cubic boron nitride (cBN) single crystals synthesized with lithium nitride (Li3N) as a catalyst under high pressure and high temperature (HPHT) was analyzed. Many nanometer-sized cubic boron nitride nuclei formed in the near surface layer, as detected by high resolution transmission electron microscopy. Based on the experiment results, the transformation kinetics is described ...

We measured firstand second-order Raman scattering in cubic and hexagonal boron nitride using excitation energies in the visible and in the UV. The nonresonant first-order Raman susceptibilities for cubic and hexagonal BN are 1 and 10 Å2, respectively. Raman scattering is thus very powerful in detecting the hexagonal phase in mixed thin boron nitride films. In cubic BN the constant Raman sucsep...

Mapping the force on plasmid DNA molecules with the atomic force microscope (AFM) showed an increased adhesion force between a silicon nitride tip and DNA strands in a mildly acidic solution. With this adhesion force, the plasmid DNA could be stretched off the mica surface, and the silicon nitride tip occasionally picked up one or several molecules of plasmid DNA from the mica surface. We have ...

We report the bulk synthesis of hydrogenated, amorphous SixNy and SixOy nanowires using pools of molten gallium as the solvent medium and microwave plasma consisting of silane in nitrogen and silane in oxygen respectively. High densities of multiple nanowires nucleated and grew from molten gallium pools. The resulting nanowires were tens of nanometers in diameter and tens of microns long. Elect...

Two-dimensional boron-carbon-nitride materials exhibit a spectrum of electronic properties ranging from insulating to semimetallic, depending on their composition and geometry. Detailed experimental insights into the phase separation and ordering in such alloy are currently lacking. Here we report the mixing and demixing of boron-nitrogen and carbon phases on ruthenium (0001) and found that ene...

CMOS platforms operating at the telecommunications wavelength either reside within the highly dissipative two-photon regime in silicon-based optical devices, or possess small nonlinearities. Bandgap engineering of non-stoichiometric silicon nitride using state-of-the-art fabrication techniques has led to our development of USRN (ultra-silicon-rich nitride) in the form of Si7N3, that possesses a...

Silicon nitride is the most commonly used passivation layer in biosensor applications where electronic components must be interfaced with ionic solutions. Unfortunately, the predominant method for functionalizing silicon nitride surfaces, silane chemistry, suffers from a lack of reproducibility. As an alternative, we have developed a silane-free pathway that allows for the direct functionalizat...