A wet. chemical techniq~e is ~escribed for passivating air-exposed GaAs surfaces. The passivating ~ayer IS elemental arsemc WhICh forms as a result of illuminating an n-type GaAs wafer immersed ~n a ~i~ture of Hel acid and d~ionized 18 Mil water with light from a mercury vapor lamp at mtenSltles of 0.01-0.05 yY-cm. Studies using XPS, LEBD, and UPS show that the passivated surfaces have the foll...

Surface tension of material surfaces and interfaces is an important parameter that affects wetting and adhesion. Surface tension can be divided into three components: Lifshitz–van der Waals component, acid component, and base component. In this study, the three-liquid-probe method was used to investigate the surface tension and its three components of various surfaces of electronic packaging ma...

Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this stud...

The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiCxOy) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD), and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments...

This work presents a comprehensive study on fast, low-cost methods for the electronic passivation of the phosphorus-diffused front surface and the non-diffused l'-type rear surface of crystalline Si solar cells. Titanium dioxide is compared with rapidly-grown thermal oxide (RTO) and PECVD silicon nitrides from three different laboratories. Double layers of RTO and Ti02 or SiN are also investiga...

Chalcogen atoms like sulphur or selenium are promising candidates for the passivation of GaAs(1 0 0) surfaces. The passivation can be obtained by evaporation of S or Se under ultra-high vacuum (UHV) conditions or by etching in chalcogen containing solutions. In both cases, an additional annealing of the samples leads to Ga-chalcogenide like surface layers showing a 2 1 low energy electron diffr...

This study describes a new method of passivating ZnO nanofiber-based devices with a ZnS layer. This one-step process was carried out in H2S gas at room temperature, and resulted in the formation of core/shell ZnO/ZnS nanofibers. This study presents the structural, optical and electrical properties of ZnO/ZnS nanofibers formed by a 2 nm ZnS sphalerite crystal shell covering a 5 nm ZnO wurtzite c...

We present a critical theoretical study of electronic properties of silicon nanoclusters, in particular the roles played by symmetry, relaxation, and hydrogen passivation on the the stability, the gap states and the energy gap of the system using the order-N [O(N)] non-orthogonal tight-binding molecular dynamics and the local analysis of electronic structure. We find that for an unrelaxed clust...

2014 Influence and passivation of extended crystallographic defects are investigated in large grained polycrystalline silicon wafers and N+ P solar cells. When the mean grain size exceeds 1 mm, the influence of intragrain defects becomes predominant. It was found that the defects have not by themselves a noticeable recombination activity and that the segregation of impurities (oxygen...), could...

The electrochemical behaviour for passivation of new alloy corrosion-resistant steel Cr10Mo1 immersed in alkaline solutions with different pH values (13.3, 12.0, 10.5, and 9.0) and chloride contents (0.2 M and 1.0 M), was investigated by various electrochemical techniques: linear polarization resistance, electrochemical impedance spectroscopy and capacitance measurements. The chemical compositi...