A photoelectrochemical study was made to compare Zr, Ti, Zn, Sn, Fe, and Cu in 1 N sulfuric acid and/or 1 N KOH. This group includes spontaneously passive, active-passive, and nonpassive metals. The apparent direct and indirect bandgaps and the flatband potentials were measured for the anodic oxides of each metal. (The bandgaps and flat-band potentials can be used to identify the anodic oXide.)...

Near-Ðeld photocurrent spectra of high-power laser diode arrays with di†erent wave-guide characteristics are reported. Subwavelength spatial resolution is achieved by using a near-Ðeld Ðbre probe as the excitation source. The e†ect of the laser diode waveguide structure and of surface recombination processes on the near-Ðeld photocurrent image formation is discussed and analysed in terms of a b...

to improve the photo-catalytic degradation of salicylic acid, we reported the fabrication of ordered tio2 nanotube arrays by a simple and effective two-step anodization method and then these tio2 nanotubes treated in a methanol solution under uv light irradiation. the tio2 nanotubes prepared in the two-step anodization process showed better photo-catalytic activity than tio2 nanotubes prepared ...

Three-dimensional hierarchical nanostructures were synthesized by the halide chemical vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires grew vertically on the sidewalls of Si wires and acted as a high surface area photoanode for solar water splitting. Electrochemical measurements showed that the photocurrent density with hierarchical Si/InGaN nanowire arrays in...

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/S...

Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show the first example of a photodiode developed on a micrometre scale sphere made of polycrystalline silicon whose photocurrent shows the Mie modes of a classical spherical resonato...

Photocurrent measurements have been performed on a quantum cascade detector structure under strong magnetic field applied parallel to the growth axis. The photocurrent shows oscillations as a function of B. In order to describe that behavior, we have developed a rate equation model. The interpretation of the experimental data supports the idea that an elastic scattering contribution plays a cen...

The design, fabrication, and characterization of a polarization-dependent normal incident quantum cascade detector coupled via complementary split-ring metamaterial resonators in the infrared regime are presented. The metamaterial structure is designed through three-dimensional finite-difference time-domain method and fabricated on the top metal contact, which forms a double-metal waveguide tog...

We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ∼6000  nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals t...

This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were m...