Abstract AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and six‐time enhancement of gain random alloy (RA) APD that is surface passivated by conformal coating Al 2 O 3 via atomic layer deposition (ALD). currents APDs with 400‐µm diameter (dry etched) at 90% breakdown voltage (0.9 V br ) are (5.5 ...

Figure 1 shows the equivalent circuit of a transimpedance amplifier and a high-impedance source. IS represents the output current of the source. CS is the sum of the source’s output capacitance and the op amp’s input capacitance. RF, with the help of the op amp, converts IS to a voltage. At low frequencies, the op amp’s inverting input is forced to be at ground potential and IS must flow throug...

A 32 by 32 array of packaged 100 μm Geiger-mode avalanche photodiodes were tested and characterized. A breakdown voltage of 32 V was measured; at or just above this voltage is where the device should be biased in order to operate in Geiger-mode. The ideal region of the forward biased IV curve resulted in an ideality factor of 1.0 and no recombination/generation region. In addition, IDL code was...