نتایج جستجو برای: photoluminescence

تعداد نتایج: 11123  

2004
Bhavtosh Bansal M. R. Gokhale Arnab Bhattacharya B. M. Arora

Self-assembled quantum dots of InAs have been grown on InP substrates by metal-organic vapour phase epitaxy. The effect of the growth temperature and the growth rate on the morphology and the optical properties of the quantum dots is studied using atomic force microscopy and photoluminescence spectroscopy. The spectral shape of the low temperature photoluminescence depends strongly on the growt...

2015
L. Karachevtseva S. Kuchmii

Oxidized macroporous silicon structures with CdS surface nanocrystals have been proposed to enhance the photoluminescence of CdS nanoparticles due to reducing the electron recombination outside the nanoparticle layer. It has been found that the resonance electron scattering on the Si–SiO2 interface for samples with low concentration of Si–O–Si states transforms into scattering on ionized surfac...

2016
Assaf Manor Nimrod Kruger Tamilarasan Sabapathy Carmel Rotschild

The maximal Shockley-Queisser efficiency limit of 41% for single-junction photovoltaics is primarily caused by heat dissipation following energetic-photon absorption. Solar-thermophotovoltaics concepts attempt to harvest this heat loss, but the required high temperatures (T>2,000 K) hinder device realization. Conversely, we have recently demonstrated how thermally enhanced photoluminescence is ...

Journal: :Physical review letters 2014
F Vialla Y Chassagneux R Ferreira C Roquelet C Diederichs G Cassabois Ph Roussignol J S Lauret C Voisin

At low temperature the photoluminescence of single-wall carbon nanotubes show a large variety of spectral profiles ranging from ultranarrow lines in suspended nanotubes to broad and asymmetrical line shapes that puzzle the current interpretation in terms of exciton-phonon coupling. Here, we present a complete set of photoluminescence profiles in matrix embedded nanotubes including unprecedented...

2007
I. Guler N. M. Gasanly

Photoluminescence spectra of Tl2In2S3Se layered single crystals have been studied in the wavelength region of 535–725 nm and in the temperature range of 22–58 K. Two photoluminescence bands centered at 564 (2.20 eV, A-band) and 642 nm (1.93 eV, B-band) were observed at T = 22 K. Variations of both bands have been investigated as a function of excitation laser intensity in the range from 16 to 5...

Journal: :Nanoscale 2018
Shuang Yang Feng Zhang Jia Tai Yang Li Yang Yang Hui Wang Jianxu Zhang Zhigang Xie Bin Xu Haizheng Zhong Kun Liu Bai Yang

Perovskite quantum dots (PQDs) exhibit remarkable photoluminescence properties; however, their use in biological applications is hindered by their extreme sensitivity to water. We report a facile and general strategy for the preparation of aqueous colloidally stable polystyrene-b-poly(ethyl oxide) (PS-b-PEO) grafted MAPbBr3 QDs (MA = methylammonium): transferring the as-synthesized PQD@PS-b-PEO...

2000
T. C. McGill S. Sivananthan X. Chu

The structure of CdTe/ZnTe superlattices has been analyzed through (J /28 x-ray diffraction, photoluminescence, and in situ reflection high-energy electron diffraction (RHEED) measurements. Samples are found to break away from CdxZn 1 _x Te buffer layers as a consequence of the 6% lattice mismatch in this system. However, defect densities in these superlattices are seen to drop dramatically awa...

2007
Jody L. House Leslie A. Kolodziejski Leslie Kolodziejski

Photoluminescence is used to optically characterize epitaxially-grown ZnSe. The ZnSe has been grown by three different growth techniques; molecular beam epitaxy, metalorganic molecular beam epitaxy and gas source molecular beam epitaxy. Photoluminescence measurements have been made for each growth method for a wide range of growth parameters. The effects of the growth parameters, as well as the...

1996
A. J. Kenyon P. F. Trwoga C. W. Pitt G. Rehm

We have carried out a study of the photoluminescence properties of silicon-rich silica. A series of films grown using plasma enhanced chemical vapor deposition over a range of growth conditions were annealed under argon at selected temperatures. Photoluminescence spectra were measured for each film at room temperature and for selected films at cryogenic temperatures. The photoluminescence spect...

2016
Xiaowu He Xiaofang Liu Rongfeng Li Bai Yang Kaili Yu Min Zeng Ronghai Yu

Ce(3+)-doped yttrium aluminum garnet (YAG:Ce) nanocrystals were successfully synthesized via a facile sol-gel method. Multiple characterization techniques were employed to study the structure, morphology, composition and photoluminescence properties of YAG:Ce nanophosphors. The YAG:Ce0.0055 sintered at 1030 °C exhibited a typical 5d(1)-4f(1) emission band with the maximum peak located at 525 nm...

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