نتایج جستجو برای: piezoelectric thin film
تعداد نتایج: 199311 فیلتر نتایج به سال:
Charged domain walls (CDWs) in ferroelectrics, as a result of “head-to-head” or “tail-to-tail” polarization configurations, are of significant scientific and technological importance, as they have been shown to play a critical role in affecting the atomic structures and controlling the electric, photoelectric and piezoelectric properties of ferroelectric materials. An understanding of the local...
Here we present a simple and fast method to reliably image polarization charges using charge gradient microscopy (CGM). We collected the current from the grounded CGM probe while scanning a periodically poled lithium niobate single crystal and single-crystal LiTaO3 thin film on the Cr electrode. We observed current signals at the domains and domain walls originating from the displacement curren...
Thls paper presents a method to measure impact forces on a surface by means of a piezoelectric thin film sensor array. The output signals of the sensor array provide information about the position, magnitude and wave form of the impact force. The sensor array may be used for tribological studies to the slider disk interface of a rigid disk storage device. In such a device a slider head assembly...
The application of lattice strain through epitaxial growth of oxide films on lattice mismatched perovskite-like substrates strongly influences the structural properties of ferroelectric domains and their corresponding piezoelectric behavior. The formation of different ferroelectric phases can be understood by a strain-phase diagram, which is calculated within the framework of the Landau–Ginzbur...
Article history: Received 26 June 2016 Accepted 6 July 2016 Available online xxxx Degradation mechanism of foldable thin film transistors (TFTs) is investigated experimentally by electrical, mechanical and electrical–mechanical hybrid stress experiments. Mechanical and electrical stress environment was set for foldable TFTs and the degradation effect according to the applied stress is investiga...
Related Articles Fast magnetization switching in GaMnAs induced by electrical fields Appl. Phys. Lett. 99, 242505 (2011) Electrical detection of nonlinear ferromagnetic resonance in single elliptical permalloy thin film using a magnetic tunnel junction Appl. Phys. Lett. 99, 232506 (2011) Loss of magnetization induced by doping in CeO2 films J. Appl. Phys. 110, 113902 (2011) Giant magnetoelectri...
If a tangle, K ⊂ B, has no planar, meridional, essential surfaces in its exterior then thin position for K has no thin levels.
PRODUCT DESCRIPTION The AD688 is a high precision ±10 V tracking reference. Low tracking error, low initial error and low temperature drift give the AD688 reference absolute ±10 V accuracy performance previously unavailable in monolithic form. The AD688 uses a proprietary ion-implanted buried Zener diode, and laser-waferdrift-trimming of high stability thin-film resistors to provide outstanding...
In this paper, the conventional boundary integral equation (BIE) formulation for piezoelectric solids is revisited and the related issues are examined. The key relations employed in deriving the piezoelectric BIE, such as the generalized Green's identity (reciprocal work theorem) and integral identities for the piezoelectric fundamental solution, are established rigorously. A weakly singular fo...
In this paper, the conventional boundary integral equation (BIE) formulation for piezoelectric solids is revisited and the related issues are examined. The key relations employed in deriving the piezoelectric BIE, such as the generalized Green's identity (reciprocal work theorem) and integral identities for the piezoelectric fundamental solution, are established rigorously. A weakly singular fo...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید