Room temperature Fourier transform spectroscopic transmissivity data in the far-infrared (10 360 cm-1) were used to derive a model for the complex refractive index (n ik) of polycrystalline diamond films grown by microwave plasma enhanced chemical vapor deposition. Transmission measurements were also made at a frequency of 19.5 cm-1 utilizing a CO2 optically pumped submillimeter laser. Due to t...

Superhydrophobic and superhydrophilic properties of chemically-modified graphene have been achieved in larger-area vertically aligned few-layer graphene nanosheets (FLGs), prepared on Si (111) substrate by microwave plasma chemical vapor deposition (MPCVD). Furthermore, in order to enhance wettability, silicon wafers with microstructures were fabricated, on which graphene nanosheets were grown ...

Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...

In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition ~PECVD! of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform ar...

Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the e...

2D Two dimensional 3D Three dimensional BEOL Back end of line BI Burn-In CMP Chemical mechanical polishing D2D Die-to-die D2W Die-to-wafer ECD Electro-chemical deposition ECG Deleted in chapter EMIB Embedded multi-die interconnect bridge FEOL Front end of line IP Intellectual property KGD Known good die KOZ Keep out zone MCM Multi chip module MCP Multi chip package MEOL Middle end of line MPM M...

We have studied dependence of volume fraction of clusters in a-Si:H films on deposition rate of the films using a multi-hollow discharge plasma CVD method The maximum deposition rate realized for each pressure exponentially increases from 0.014 nm/s to 0.96 nm/s with decreasing pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters slightly increases with increasing the dep...

OBJECTIVES To investigate dynamic changes in human plasma β-amyloid (Aβ) concentrations, evaluate the effects of aging and amyloidosis on these dynamics, and determine their correlation with cerebrospinal fluid (CSF) Aβ concentrations. DESIGN A repeated plasma and CSF sampling study. SETTING The Washington University School of Medicine in St Louis, Missouri. PARTICIPANTS Older adults with...

We report a new route to prepare high quality, monolayer graphene by the dehydrogenation of graphane-like film grown by plasma-enhanced chemical vapor deposition. Large-area monolayer graphane-like film is first produced by remote-discharged radio frequency plasma beam deposition at 650 °C on Cu/Ti-coated SiO(2)-Si. The advantages of the plasma deposition include very short deposition time (<5 ...