نتایج جستجو برای: plasma enhanced atomic layer deposition

تعداد نتایج: 1089423  

Journal: :Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2017

2017
Brent D. Keller Adam Bertuch J. Provine Ganesh Sundaram Nicola Ferralis Jeffrey C. Grossman

Recent advances in the field of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have indicated that atomic layer deposition (ALD) of the metal oxide and subsequent sulfidation could offer a method for the synthesis of large area two-dimensional materials such as MoS2 with excellent layer control over the entire substrate. However, growing large area oxide films by ALD with ...

Journal: :Physical chemistry chemical physics : PCCP 2015
Huiyun Wei Jiangjian Shi Xin Xu Junyan Xiao Jianheng Luo Juan Dong Songtao Lv Lifeng Zhu Huijue Wu Dongmei Li Yanhong Luo Qingbo Meng Qiang Chen

An ultrathin AlOx layer has been deposited onto a CH3NH3PbI3 film using atomic layer deposition technology, to construct a metal-insulator-semiconductor (MIS) back contact for the hole-transporting material-free perovskite solar cell. By optimization of the ALD deposition cycles, the average power conversion efficiency (PCE) of the cell has been enhanced from 8.61% to 10.07% with a highest PCE ...

Journal: :ECS Journal of Solid State Science and Technology 2015

Journal: :Applied Physics Express 2023

Abstract The defect generation and recovery are studied in a high- k HfO 2 /SiO /Si stack for MOSFETs, at each fabrication step. is fabricated well-established manner, via chemical oxidation SiO interfacial layer atomic deposition layer, followed by post-deposition annealing (PDA), O plasma treatment, forming gas (FGA). Throughout the fabrication, carrier lifetime measured monitoring defects st...

2007
M. G. Hussein K. Wörhoff G. Sengo A. Driessen

Silicon oxynitride (SiOxNy:H) layers were grown from 2%SiH4/N2 and N2O gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the relevant deposition parameters including radio frequency power, chamber pressure, total gas flow, substrate temperature and N...

Journal: :Journal of Applied Physics 2021

Surface passivation of germanium is vital for optimal performance Ge based optoelectronic devices especially considering their rapidly increasing surface-to-volume ratios. In this work, we have investigated the surface by a stack consisting thin layer hydrogenated amorphous silicon (a-Si:H) and an aluminum oxide (Al2O3) capping layer. Plasma-enhanced chemical vapor deposition was used to deposi...

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