Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markov...

In part I of the Thesis charge ordering and transport in arrays of coated semiconductor nanocrystals (quantum dot arrays) are studied. Charge ordering in dot arrays is considered by mapping the electrons on the dots onto the frustrated spin model on the triangular lattice. A number of phases is identified for this system. Phase diagram is studied by means of the height field order parameter. No...

This perspective examines quantum dot (QD) superlattices as model systems for achieving a general understanding of the electronic structure of solids and devices built from nanoscale components. QD arrays are artificial two-dimensional solids, with novel optical and electric properties, which can be experimentally tuned. The control of the properties is primarily by means of the selection of th...

Quantum-mechanical scattering involving continuum states coupled to a scatterer with discrete spectrum gives rise Fano resonances. Here we consider scatterers that possess internal vibrational degrees of freedom in addition states. Entanglement between the scattered excitation and modes complicates analytical numerical calculations considerably. For example one-dimensional develop multichannel ...

Coherent resonant tunneling through an array of quantum dots in an inhomogeneous magnetic field is investigated using an extended Hubbard model. Both the multiterminal conductance of an array of quantum dots and the persistent current of a quantum-dot molecule embedded in an Aharanov-Bohm ring are calculated. The conductance and persistent current are calculated analytically for the case of a d...

We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with quantum dots or threefold stacked quantum dot layers, respectively. A superlinear increase of the quantum dot related photoluminescence is detected with increasin...