Abstract: We will examine the waveguide mode losses in ridge-guided quantum cascade lasers. Our analysis illustrates how the low-loss mode for broad-ridge quantum cascade lasers (QCLs) can be a higher-order lateral waveguide mode that maximizes the feedback from the sloped ridge-wall regions. The results are in excellent agreement with the nearand far-field data taken on broad-ridge-guided quan...

Articles you may be interested in High power, widely tunable, mode-hop free, continuous wave external cavity quantum cascade laser for multi-species trace gas detection Appl. Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes Appl. High-performance uncooled distributed-feedback quantum cascade laser w...

This paper represents the study of light sources for optical communication through the optical fiber. For this purpose, the ideal light source characteristics have been studied. According to the study, the semiconductor LASER diodes are preferable sources over LEDs. From the family of LASER diodes, Distributed Feedback (DFB) lasers are considered as source. They have low threshold current and h...

The gain-lever effect enhances the modulation efficiency of a semiconductor laser when compared to modulating the entire laser. This technique is investigated in a long-cavity multi-section quantum-dot laser where the length of the modulation section is varied to achieve 14:2, 15:1 and 0:16 gain-to-modulation section ratios. In this work, the gain-levered modulation configuration resulted in an...

Waveguide nonlinear-optic devices and integrated semiconductor lasers with appropriate design can perform quantum-optics functions that are potentially useful for R&D of quantum information processing. This paper reports the current status of the work of the authors group in this new subarea "Quantum Photonic Devices", including theoretical background, design and fabrication of quasi-phase matc...

We report the use of Q-switched Nd:YAG laser irradiation technique to enhance the interdiffusion of Ga-Al, and hence the quantum well intermixing (QWI), in GaAs/AlGaAs double quantum well (DQW) structures. Multiphoton interactions with carriers lead to phonon emission; the phonons interact with lattice thus generating point defects, which diffuse during subsequent annealing stage in a rapid the...

Quantum dots laser diodes using the dots-in-a-well (DWELL) structure (InAs dots in an InGaAs quantum wells) have exhibited significant recent progress. With a single InAs dot layer in Inoi5Gao.8sAs quantum well, threshold current densities are as low as 26 A cm2 at 1 .25 xm. Quantum dot laser threshold current densities are now lower than any other reported semiconductor laser. In this work, th...

Articles you may be interested in MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers Appl. 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature Appl.

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We demonstrate continuous voltage control of the nonradiative transition lifetime in semiconductor heterostructures. The results were obtained by picosecond time-resolved experiments on biased SiGe valence band quantum well structures using a free electron laser. By varying the applied voltage, the intersubband hole relaxation times for quantum well structures were varied by a factor of 2 as th...