Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS). Mot...

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicat...

We developed a 4×4 fully non-blocking crossbar switch fabric based on interferometric thermal phase shifters, where heating is achieved using resistive elements around the silicon waveguide. We achieved switching times of 5 μs, with 41 mW power consumption in an individual switching element.

Resistive Switching Devices switching device is an emerging with the advantages of simple structure, easy for 3D integration, low power consumption, high speed, and good scalability. The resistive can be primarily attribute to formation conductive filaments in bulk or interfacial effects. After integration a crossbar structure (e.g., 1T1R, 1S1R VRRAM), various applications further explored. Due...

Analog and digital resistive switching characteristics of ITO/CuSCN/Cu ITO/Cu-SPE/Cu memristive devices.

Solution-processed black phosphorus quantum-dot-based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and curre...

HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an AgilentB1500A analyzer. Keywor...