Photocapacitance transient technique has been applied to Schottky semitransparent barriers as an alternative method, instead of the classical capacitance voltage transient method in p+-n junctions for detecting minority carrier traps. In such a way and, under certain conditions, it is possible to detect and measure both majority and minority traps in Schottky barriers. The method applies well t...

A time-dependent effective-mass SchrödingerPoisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the car...

Composite rightand left-handed (CRLH) transmission lines with regularly spaced Schottky varactors are characterized for propagation of short envelope pulses. Due to strong dispersion, a short pulse cannot travel on a conventional CRLH line without distortion. This distortion is compensated for by the effects of Schottky varactors such that the line supports solitonic pulses, whose pulse width d...

I A reliable device model is crucial for the development d implementation of a circuit design. However, the sation of a high quality model requires a significant lount of timeand money. The software package presented this paper seeks to minimize the timeand money invested the realization of a high quality model for SiC Schottky, erged PiN Schottky, and PiN Power diodes based on cNutt and Mantoo...

Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/nanowires across paired Au electrodes using dielectrophoresis. A current of 0.5 microA at 1.5 V forward bias has been received, and the diode can bear an applied voltage of up to 10 V. The ideality factor of the diode is approximately 3, and the on-to-off current ratio is as high as...

We report a study of the Schottky barrier for Pb films grown on Si surfaces terminated by various metals (Ag, In, Au, and Pb) to explore the atomic-scale physics of the interface barrier and a means to control the barrier height. Electronic confinement by the Schottky barrier results in quantum well states in the Pb films, which are measured by angle-resolved photoemission. The barrier height i...

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...

We have calculated the piezoelectric field and charge distribution for various III-nitride heterostructures. Our calculations include strain energy minimization and doping effects, and are presented to show the magnitude of piezoelectric effects in strained layers. We compare our calculated results to device results where available. These include the two-dimensional electron gas in heterojuncti...

Substantial progress has b2een made recently in the advancement of solid state terahertz sources using chains of Schottky diode frequency multipliers [1-3]. The multiplier diodes are often simulated using a simple Schottky junction model plus a series resistance, RS, because of the model’s simplicity and ease of use in commercial harmonic balance simulators. The DC series resistance value is us...

The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2-D) simulation. The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M). The characteristics of this structure are compared with that of lateral PNP transistors o...