Two-dimensional (2D) semiconducting monolayer transition metal dichalcogenides (TMDCs) have stimulated lots of interest because they are direct bandgap materials that have reasonably good mobility values. However, contact between most metals and semiconducting TMDCs like 2H phase WSe2 are highly resistive, thus degrading the performance of field effect transistors (FETs) fabricated with WSe2 as...

The positions of the molecular orbitals of the conjugated semiconducting polymer, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), relative to the Fermi level, shift when lead selenide (PbSe) quantum dots or the fullerene based molecule [(6)]-1-(3-(methoxycarbonyl)propyl)-[(5)]-1-phenyl-[5,6]-C61, known as PCBM, are dispersed in the polymer host. This is evident from the co...

The implementation of graphene in semiconducting technology requires precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic properties of the graphene/n-Ge(110) interface are investigated on the local (nm) and macro (from μm to mm) scales via a combination of different microscopic and spectroscopic surface science techniques accompanied by density...

Recent studies have clearly indicated the favorable effect of lead as a growth promoter for MX2 (M = Mo, W; X = S, Se) nanotubes using MX2 powder as a precursor material. The experimental work indicated that the lead atoms are not stable in the molybdenum oxide lattice ion high concentration. The initial lead concentration in the oxide nanowhiskers (Pb:Mo ratio = 0.28) is reduced by one order o...

The potential to perform at low voltages is a unique feature of carbon nanotube thin-film transistors (CNT-TFTs) when compared to more common TFT material options, such as amorphous Si or organic films. In this work, CNT-TFTs are fabricated using high-purity CNTs (verified electrically to be !99% semiconducting) on an embedded gate device structure, which allows for scaling of the dielectric (e...

Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source-drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached...

Semiconducting polymers have previously been used as the transduction material in X-ray dosimeters, but these devices have a rather low detection sensitivity because of the low X-ray attenuation efficiency of the organic active layer. Here, we demonstrate a way to overcome this limitation through the introduction of high density nanoparticles having a high atomic number (Z) to increase the X-ra...

semiconducting oxides in 20011, research into functional oxide-based, one-dimensional nanostructures has rapidly expanded because of their unique and novel applications in optics, optoelectronics, catalysis, and piezoelectricity. Semiconducting oxide nanobelts are a unique group of quasi-one-dimensional nanomaterials, which have been systematically studied for a wide range of materials with dis...

Since their discovery by Iijima in 1991, carbon nanotubes (CNTs) have attracted great interest in chemistry, physics, electronics, and materials science. As a result of their chemical and mechanical stability, high conductivity, high surfaceto-volume ratio, and other unique properties, CNTs have various potential applications in areas such as field-effect transistors (FETs), sensors, light emit...

Reversibly altering the physical structure of a material on-demand can lead to direct manipulation its electronic properties. In this work localized electron beam is used switch regions nanotube-encapsulated HfTe${}_{2}$ nanoribbons between metallic 1T phase and previously experimentally inaccessible semiconducting 1H phase. The change observed in-situ in high-resolution transmission microscope...