Introduction: Ultrashort optical pulses are nowadays a basic requirement for numerous applications such as optical communications, nonlinear spectroscopy or terahertz field [1]. As measurement and control of these pulses cannot be achieved by electronic means, alloptical methods have been developed. For example, temporal intensity profiles can be reconstructed from cross correlation records bas...

We report on nanoelectronic device applications of a nonalloyed contact structure which utilizes a surface layer of low-temperature grown GaAs as a chemically stable surface. In contrast to typical ex situ ohmic contacts formed on n-type semiconductors such as GaAs, this approach can provide uniform contact interfaces which are essentially planar injectors, making them suitable as contacts to s...

In the 1980s—the early days of circuit boards—most failures were due to poor solder joints on the boards, imperfections among board connections, or problems with the bonds and bond wires from integrated circuit (IC) pads to pin lead frames. The Joint Test Action Group (JTAG) formed in 1985 to provide a pins-out view from one IC pad to another so these faults could be examined. The eventual resu...

Carbon nanotubes are promising nanoscale materials for novel electrical, mechanical, chemical, and biological device and sensors based on its outstanding properties. Single walled carbon nanotubes can be either semiconducting or metallic material depending on its structures. However, controlling the structure is quite challenging with current technologies. For the network formation of the singl...

Semiconductor flash memory is an indispensable component of modern electronic systems. The minimum feature size of an individual CMOSFET has shrunk to 15nm with an equivalent gate oxide thickness (EOT) of 0.8nm in 2001. However, semiconductor flash memory scaling is far behind CMOS logic device scaling. For example, the EOT of the gate stack in semiconductor flash memory is still more than 10nm...

Next generation semiconductor devices and evolving opportunities in nanoelectronics present new challenges for fabrication technology. These include patterning and structure generation to define the smallest features, the deposition of metals, metal oxides, and other functional layers within challenging topographies, and development of the associated integration steps necessary to create workin...

Experiments have been performed with a 100-kJ pulse-forming network (PFN) to characterize the transient behavior of semiconductor diodes serving as capacitor-protecting devices. In addition to the experiments, computer techniques are used to illustrate and predict the dynamic behavior ofPFN diodes. From analyses of the data collected, it was determined that in a PFN under specific loading condi...

Power semiconductor devices are the key electronic components used in power electronic systems. The solid-state power electronic revolution started with the invention of the thyristor or Silicon Controlled Rectifier (SCR) in 1956, and many power semiconductor devices have been produced since then. Advances in semiconductor technology have improved the efficiency of electronic devices which resu...

The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, ...