A new kind of semiconductor composite material is demonstrated with a dispersion of semimetallic particles with properties common to high-quality single crystals. These materials are arsenides such as GaAs, AIGaAs, and InGaAs containing arsenic clusters. These composites are formed by incorporating excess As in the semiconductor, which precipitate with anneal. The incorporation of the excess As...

We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the ...

Advanced analysis features implemented in the Vienna Integrated System for TCAD Applications simulation environment are presented. These functionalities support automatic experiment generation (design of experiments), model fitting (response surface methodology), optimization, and calibration. They interact with the core modules of the framework supporting the simulation of the manufacturing pr...

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  ...

Although simulators capable of dealing with the different kinds of processes in the simulation of semiconductor device fabrication are widely available, the combination of several of them to a whole process flow is still a complicated endeavor. This paper points out the difficulties arising in data exchange between simulators and we present as a solution the WAFER-STATE SERVER. Our WAFER-STATE ...

Doping a semiconductor can extend the light absorption range, however, it usually introduces mid-gap states, reducing the charge carrier lifetime. This report shows that doping lanthanum dititinate (La2Ti2O7) with nitrogen extends the valence band edge by creating a continuum of dopant states, increasing the light absorption edge from 380 nm to 550 nm without adding mid-gap states. The dopant s...

Organic metal-semiconductor field-effect transistors (OMESFETs) were fabricated with a polycrystalline organic semiconductor (pentacene) and characterized in order to systematically analyze their operation mechanism. Impedance measurements confirmed full depletion of the thick pentacene film (1 m) due to the low doping concentration of unintentional doping (typically less than 10 cm). The nece...

Semiconductor surfaces and ultrathin interfaces exhibit an interesting variety of two-dimensional quantum matter phases, such as charge density waves, spin density waves and superconducting condensates. Yet, the electronic properties of these broken symmetry phases are extremely difficult to control due to the inherent difficulty of doping a strictly two-dimensional material without introducing...

The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found pchannel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after ...

This paper, based on a presentation at the Spintronics 2001 conference, provides a review of our studies on II–VI and III–V Mn-doped Diluted Magnetic Semiconductors. We use simple models appropriate for the low carrier density (insulating) regime, although we believe that some of the unusual features of the magnetization curves should qualitatively be present at larger dopings (metallic regime)...