The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed a...

Metal-semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds reconfigurable field-effect transistors, capable dynamically altering operation mode between n- or p-type even during run-time. Targeting enhancement fabrication reproducibility electri...

The ultimate goal in transistor scaling is to successfully fabricate (with acceptable yield) structures with ever smaller dimensions to be able to put more functions on a chip. At the end of the roadmap (more than Moore scenario), amongst other devices, nanowire transistors are speculated to replace conventional MOSFET devices. In fact, the 22 nm technology node is based on FinFET technology. S...

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4 eV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of ...

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually ...