نتایج جستجو برای: semiconductor superlattice

تعداد نتایج: 63399  

2003
Shaoxin Feng Christoph H. Grein Michael E. Flatté

A nonequilibrium Green’s function method is applied to model high-field quantum transport and electronphonon resonances in semiconductor superlattices. The field-dependent density of states for elastic ~impurity! scattering is found nonperturbatively in an approach which can be applied to both high and low electric fields. I-V curves, and specifically electron-phonon resonances, are calculated ...

Journal: :Journal of the American Chemical Society 2015
Evelyn Auyeung William Morris Joseph E Mondloch Joseph T Hupp Omar K Farha Chad A Mirkin

Herein, we describe a strategy for converting catalytically inactive, highly crystalline nanoparticle superlattices embedded in silica into catalytically active, porous structures through superlattice assembly and calcination. First, a body-centered cubic (bcc) superlattice is synthesized through the assembly of two sets of 5 nm gold nanoparticles chemically modified with DNA bearing complement...

2001
Chung-Yu Mou

We investigate the effect of the superlattice structure on the single particle transport along the c-axis of high temperature superconductors. In particular, superlattice systems that consists of metals/insulators and d-wave superconductors (NS/IS superlattice) are considered. We find that for the NS superlattice in the large mass anisotropy limit of the metal, the density of state in the low e...

2017
V. V. Makarov A. E. Hramov A. A. Koronovskii K. N. Alekseev V. A. Maximenko M. T. Greenaway T. M. Fromhold O. I. Moskalenko A. G. Balanov

1999
X-C. Cheng T. C. McGill Thomas J. Watson

We demonstrate the use of bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice as the gain material in a separate absorption/multiplication avalanche photodiode with sensitivity up to 1.74 mm. Both gain schemes were implemented in a molecular-beam epitaxy grown structure with a selectively doped InAs/AlSb superlattice as the n-type layer. Hole impact ionization enhancement was observed in Al0.04Ga0.9...

Journal: :Nature communications 2014
Haiou Zhu Chong Xiao Hao Cheng Fabian Grote Xiaodong Zhang Tao Yao Zhou Li Chengming Wang Shiqiang Wei Yong Lei Yi Xie

Superlattices have attracted great interest because of their tailorable electronic properties at the interface. However, the lack of an efficient and low-cost synthetic method represents a huge challenge to implement superlattices into practical applications. Herein, we report a space-confined nanoreactor strategy to synthesize flexible freestanding graphene-based superlattice nanosheets, which...

Journal: :Angewandte Chemie 2014
Sung-Hwan Lim Hyung-Sik Jang Jae-Min Ha Tae-Hwan Kim Pawel Kwasniewski Theyencheri Narayanan Kyeong Sik Jin Sung-Min Choi

We report a highly ordered intercalated hexagonal binary superlattice of hydrophilically functionalized single-walled carbon nanotubes (p-SWNTs) and surfactant (C12 E5 ) cylindrical micelles. When p-SWNTs (with a diameter slightly larger than that of the C12 E5 cylinders) were added to the hexagonally packed C12 E5 cylindrical-micellar system, p-SWNTs positioned themselves in such a way that th...

1998
R. S. Goldman R. M. Feenstra

We have investigated the properties of strain-compensated InGaAsP/InGaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP barrier. Using cross-sectional scanning tunneling microscopy and spectroscopy, we observe lateral variations in layer thickness and electronic properties. When the number of superlattice periods is increased from...

2011
Ryotaro Inoue Kenta Muranaga Hideaki Takayanagi Eiichi Hanamura Masafumi Jo Tatsushi Akazaki Ikuo Suemune

Ryotaro Inoue, 2, ∗ Kenta Muranaga, Hideaki Takayanagi, 3 Eiichi Hanamura, Masafumi Jo, Tatsushi Akazaki, 2 and Ikuo Suemune 2 Dept. of Applied Physics, Tokyo Univ. of Science, Tokyo 162-8601, Japan. CREST, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan. MANA, National Inst. for Materials Science, Tsukuba 305-0044, Japan. Japan Science and Technology Agency, Kawaguchi 332-0012, ...

Journal: :E3S web of conferences 2021

We have investigated in the bands structure and effective mass, respectively, along growth axis plane of InAs (d 1 =48.5Å)/GaSb(d 2 =21.5Å) type II superlattice (SL), performed envelop function formalism. studied semiconductor to semimetal transition evolutions optical band gap, E g (?), as a d , valence offset ? temperature. In range 4.2–300 K, corresponding cutoff wavelength ranging from 7.9 ...

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