Highly reliable, thin-film thermoelectric generators are strongly desired for future sensor advancements. Al-induced layer exchange is a unique method producing SiGe layers on flexible plastic substrate at low temperatures. In this study, we investigated the thickening of Si1−xGex (x = 0, 0.6, and 1) to improve output power. The upper limit film thickness was approximately 1000 nm, while it inf...

OPTICAL PROPERTIES AND CARRIER TRANSPORT IN Si/S1-xGex NANOSTRUCTURES by Eun Kyu Lee Defect-free epitaxial growth of Ge on a ~4 % lattice-mismatched single-crystal Si substrate is achieved using reduced dimension nanoscale heterostructures, where efficient structural relaxation might occur due to an enhanced adatom migrations and high surfaceto-volume ratio. For development of novel electronic ...

High-quality n-type continuously graded Ge-rich Si1?xGex parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal compositional profile. THz intersubband absorption has been investigated in modulation-doped samples and directly doped the wells. The c...