Optical properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral microreflectometry. The compositions of a-SiCN thin films deposited with different CH4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was found that the transmittance of a-SiCN thin films decreases with the increasing carbon content; the ind...

Tungsten oxide (WOx) thin film, which is well known as an electrochromic display, was deposited on the ITO film coated flexible substrates using the RF magnetron sputtering method. Phenomena of processing plasmas, the film quality and the electrochromic properties of deposited WO3 thin film have been studied as parameters of a gas pressure and gas mixture. Experimental results suggest that depo...

As we know sol-gel is one of the most important techniques for thin film preparation. In this paper, high transmission silica thin films have been prepared by dip-coating process from a new silicon-alkoxide solution. The prepared sol was stable for 45 days which is very important to characterize the coating process. The optical properties as a function of aging time, withdrawal rate, and he...

rapid thermal processing (rtp) has become a key technology for semiconductor device manufacturing in a variety of applications, such as thermal oxidation, annealing, and thin-film growth. hence, understanding the radiative properties of silicon and other relevant materials is essential for the analysis of the thermal transport processes. we have analyzed and calculated the spectral, directional...

Thin-film transistors have been fabricated in polycrystalline silicon films on steel foil. The polycrystalline silicon films were formed by the crystallization of hydrogenated amorphous silicon, which had been deposited on 200-mm-thick foils of stainless steel coated with ;0.5-mm-thick layers of SiO2. We employed crystallization temperatures ~and duration! of 600 °C ~6 h!, 650 °C ~1 h!, and 700...

There is a growing interest in the design and fabrication of flexible and rugged electronics particularly for large-area displays and sensor arrays. In this work, we describe the fabrication of amorphous silicon (a-Si:H) thin film transistors (TFTs) on a Kapton substrate which can be permanently deformed into a spherical cap shape. This level of strain would crack uniform a-Si:H device films. ...