Photoluminescence (PL) from commensurately strained SiGe layers grown directly on silicon substrates and secondary ion mass spectroscopy (SIMS) of buried Si/SiGe interfaces are used to evaluate different low-temperature cleaning methods of substrate surfaces for silicon and SiGe epitaxy in a nonultrahigh vacuum system. Both the sources of contamination as well as effective cleaning methods were...

Herein, we present the chemistry of isolable monatomic silicon(0) and germanium(0) complexes, highlighting their synthesis, structure, reactivity, with a particular focus on cyclic bis-carbene- bis-silylene-supported silylones germylones.

We show by simulation that electron mobility and velocity overshoot are greater when strained inversion layers are grown on SiGe-On-insulator substrates ~strained Si/SiGe-OI! than when unstrained silicon-on-insulator ~SOI! devices are employed. In addition, mobility in these strained inversion layers is only slightly degraded compared with strained bulk Si/SiGe inversion layers, due to the phon...

To date, integrated waveguides with the lowest losses have all relied at least in part on amorphous materials. In this work, we demonstrate fully crystalline, single-mode microresonators comprising epitaxially grown S mathvari...

The structural, cohesive, electronic and optical properties of mixed SiGe:H quantum dots are studied by Density Functional Theory (DFT) calculations on a representative ensemble of medium size nanoparticles of the form SixGe47−x : H60. The calculations have been performed in the framework of the hybrid non-local exchange-correlation functional of Becke, Lee, Parr and Yang (B3LYP). Besides the g...

Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator (SOI) substrates. The devices have application in low power, radio-frequency electronics. The bonded wafer substrates incorporate poly-Si filled, deep trenches for isolation. A novel selective and non-selective low pressure chemical vapour deposition (LPCVD) growth process was used for...

We demonstrate that high-injection barrier effects associated with the collector-base silicon-germanium (SiGe) to silicon (Si) heterojunction are an important design constraint for SiGe heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. Due to its thermally activated nature, these barrier effects can have important dc and ac consequences at cryogenic temperatures eve...