Silicon Carbide is a wide bandgap semiconductor (3 eV for 6H-SiC at 300 K) suitable for high voltage, high temperature, high frequency and power devices. Its drift velocity

We show that the number of concentric graphene cylinders forming a carbon nanotube can be found by squeezing the tube between an atomic force microscope tip and a silicon substrate. The compressed height of a single-walled nanotube (double-walled nanotube) is approximately two (four) times the interlayer spacing of graphite. Measured compression forces are consistent with the predicted bending ...

In this paper, the electric-discharge machining (EDM) of non-contact seal grooves was studied. Two types of material, namely: tungsten carbide and silicon carbide were tested by EDM due to their hard machining behaviors. The geometry of seal grooves is another reason why grinding or other precision machining processes cannot be applied. Four parameters of EDM processes were studied, namely: ele...

SiC is an extremely promising material for nanoelectromechanical systems given its large Young’s modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective...

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...

Combustion synthesis (CS) is an effective technique to produce a wide variety of advanced materials that include powders and net shape products of ceramics, intermetallics, composites and functionally graded materials. This method was discovered in the beginning of 1970's in the former Soviet Union (Merzhanov & Borovinskaya, 1972), and the development of this technique has led to the appearance...

Dye-sensitized solar cells (DSSCs) are fabricated using a novel 3C-SiC/TiO(2) nanocomposite as a photoelectrode to enhance the power conversion efficiency. Compared with a pristine nanocrystalline TiO(2) cell, a DSSC based on a 3C-SiC (0.04 wt%)/TiO(2) nanocomposite photoelectrode shows ~115% increase in power conversion efficiency.

The world standards for conventional ceramic hardness have varying requirements for control of loading rate during the indentation cycle. A literature review suggests that loading rate may affect measured hardness in some instances. In view of the uncertainty over this issue, new experiments over a range of indentation loading rates were performed on a steel, sintered silicon carbide, and an al...

Ordered mesoporous SiC with high specific surface area (650-800 m(2) g(-1)) and well ordered pore structure was obtained via nanocasting of polycarbosilanes into SBA-15 and subsequent conversion of the polymer at 1300 degrees C.