As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation tr...

Z. Naturforsch. 58b, 211 – 216 (2003); received Oktober 4, 2002 The oxidative coupling of various symmetric (5 7) as well as unsymmetric silicon bisnaphtholates (11, 12), initiated by different oxidants (iron(III), cerium(IV), copper(II) or hypervalent iodine), furnishes the corresponding symmetric and unsymmetric binaphthols 13 17. The coupling reaction of the substrates follows strictly an in...

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in ...

The authors would like to make the following correction to their paper[1]. In this paper,we wrongly listed the coordinates of the new silicon allotrope [...].

The goal of this study is to elucidate the formation of molecular gradients made of semifluorinated organosilanes (SFOs) on flat substrates by using a methodology developed by Chaudhury and Whitesides (Science 1992, 256, 1539). We use surface-sensitive combinatorial near-edge X-ray absorption fine structure (combi-NEXAFS) spectroscopy to measure the position-dependent concentration and orientat...

Standing modes of light in front of the reflecting surface of silicon modulate the excitation and emission of fluorescent dyes. This effect was used to determine the distance of a biomembrane from an oxidized silicon chip. The membrane of a red blood cell (ghost) was stained with a cyanine dye and attached with poly-lysine to a surface structured with microscopic steps of silicon dioxide on sil...

AbstructThe etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, TVW alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-...

The focus of this project was the characterization and growth of 3C-silicon carbide (b-SiC) nanowires using the vapor-liquid-solid method. Chemical vapor deposition (CVD) occurred at temperatures ranging from 1050oC to 1100oC using silane and propane as precursor gases. Experimentation with various surface preparations, including metal catalysts such as nickel (Ni) and aluminum (Al) deposited b...

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Materials and fabrication procedures are described for bioresorbable transistors and simple integrated circuits, in which the key processing steps occur on silicon wafer substrates, in schemes compatible with methods used in conventional microelectronics. The approach relies on an unusual type of silicon on insulator wafer to yield devices that ...

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this wo...