Silicon photonics shows tremendous potential for the development of the next generation of ultra fast telecommunication, tera-scale computing, and integrated sensing applications. One of the challenges that must be addressed when integrating a "photonic layer" onto a silicon microelectronic circuit is the development of a wafer scale optical testing technique, similar to that employed today in ...

The aim of this paper is to investigate the low-frequency noise behavior in p-channel SOI FinFETs processed with different strain techniques. An unusual noise behavior was observed for all devices studied. This unusual noise was investigated for different applied gate voltages and different channel lengths at room temperature. The carrier number fluctuations explain the flicker noise for all de...

We present a new unified analytical front surface potential model. It is valid in all regions of operation (from the sub-threshold to the strong inversion) and an analytical expression for the critical voltage Vc delineating the partially depleted (PD) and the fully depleted (FD) region is introduced. The drift/diffusion equation is used to derive a single formula for the drain current valid in...

We present a design of a vision sensor device, implemented in a three-dimensional (3D) silicon on insulator (SOI) 150nm CMOS technology. The proof-of-concept device contains an image sensor array on one layer, and a pitchmatched array of 32x32 pixel-parallel processors, distributed over two further layers. The processor array uses mixed-mode processing elements and operates in SIMD (Single Inst...

This work introduces the use of GradedChannel SOI MOSFETs to make analog current mirrors and compare their performance with those made with conventional fully depleted SOI transistors. It is demonstrated that Graded-Channel MOSFETs can provide higher precision current mirror with enhanced output swing. Also lesser modifications of the output characteristics due to the self-heating effect than i...

A theoretical study is presented for interactions between surface acoustic waves ~SAWs! and a two-dimensional electron gas ~2DEG! in the presence of spin-orbit ~SO! interaction ~SOI! induced by the Rashba effect. It is found that the presence of the SOI in a 2DEG can open up new channels for electronic transitions. As a result, an enhanced absorption of the SAWs by a 2DEG can be achieved throug...

This paper describes applications of Silicon on Insulator (SOI) technology to high performance onchip memories (e.g. SRAMs and register files etc.).The primary focuses are on the important and unique issues in SOI technology such as performance gain, history effect, power reduction, pulsewidth control and self-heating. The effects on the interconnect performance and reliability are also discuss...

MEMS devices are typical systems where multiphysics simulations are unavoidable. In this work, we present possible applications of 3-D self-assembled SOI (Siliconon-Insulator) MEMS such as, for instance, thermal actuators and flow sensors. The numerical simulations of these microsystems are presented. Structural and thermal parts have to be strongly coupled for correctly describing the fabricat...

It has become increasingly difficult to scale CMOS transistors beyond 130nm, yet still maintain high drive currents and reduce supply voltage (Vdd). Much attention has been focused on high mobility for boosting performance of the short channel devices. In this paper we will review the latest development in substrate engineering using the Smart Cut technique, new device architecture and challeng...

This paper presents a micro electrostatic vibration-toelectricity energy converter. For the 3.3 V supply voltage and 1cm chip area constraints, optimal design parameters were found from theoretical calculation and Simulink simulation. In the current design, the output power is 200 μW/cm for the optimal load of 8 MΩ. The device was fabricated in a silicon-on-insulator (SOI) wafer. Mechanical and...