A multiple deposition and etching process has been developed to enable high fill factor boron deposition in high aspect ratio holes fabricated in a (100) silicon substrate. The boron deposition was carried out using low-pressure chemical vapor deposition and the etching was done by inductively coupled plasma reactive ion etching technique. The boron deposition processes were carried out under d...

In this paper, a kind of multi-disciplinary simulation and design platform for wafer manufacturing process with Chamber system is presented. This platform is developed as an in-house program, with different functional component for multi-disciplinary problems, which can drive the commercial FEM solver with code. There are also management function for user, products, and analysis or optimization...

The influence of change in deposition conditions of silane concentration and substrate temperature on optical properties of hydrogenated microcrystalline silicon thin film samples prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, are investigated. The crystalline volume fraction for the samples determined from Raman spectra are correlated with the silane concentration, su...

We discuss a custom built hybrid physical chemical vapour deposition (HPCVD) system for MgB2 ultra-thin film deposition: construction, deposition process development, and optimization. Achieved films on SiC substrates have a critical temperature (Tc) ranging from 35K (10nm thick films) to 41K (40nm thick films). The 20nm thick unpatterned film had a room temperature resistivity of 13μΩ·cm, wher...