We present the theory of out-of-plane (or vertical) electron thermal-field emission from 2D semimetals. show that current-voltage-temperature characteristic is well-captured by a universal scaling relation applicable for broad classes semimetals, including graphene and its few-layer, nodal point semimetal, Dirac semimetal at verge topological phase transition line semimetal. Here an important c...

The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-re...

Active refrigeration of optoelectronic components through the use of thin film solid state coolers based on III-V materials is proposed and investigated. Enhanced cooling power comparing to the thermoelectric effect of the bulk material is achieved through thermionic emission of hot electrons over a heterostructure barrier layer. It is shown that these heterostructures can be monolithically int...

The current-voltage characteristics of Au/n-Si Schottky barrier diodes were measured in a wide temperature range of 70-310 K. The forward current-voltage characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and assuming Gaussian distribution (single) of barrier height. Findings are investigated to explore TFE-mechanism with high value of characteristic ene...

The semiconductor industry, governed by the Moore’s law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor that allowed the manufacturers to pack more andmore functionality into the same chip area. However, it is now widely agreed that the happy d...

An analytical model which matches thermionic-emission-diffusion of holes across the emitter-base heterojunction with drift-diffusion transport across a graded base has been developed and used to examine the performance capabilities of InP-based Pnp heterojunction bipolar transistors ~HBTs!. Hole drift-diffusion across the emitter-base space charge region is shown to be of comparable importance ...

THE transmission electron microscope was invented in Germany in 1932. It works by directing a beam of electrons through a specimen and then using a lens to enlarge the image formed by their passage. In Japan, development and research into its applications began in 1939, and numerous companies around the world have competed to develop the instruments since Hitachi developed its own fi rst transm...