Strain and band gap engineered epitaxial germanium (?-Ge) quantum-well (QW) laser structures were investigated on GaAs substrates theoretically experimentally for the first time. In this design, we exploit ability of an InGaAs layer to simultaneously provide tensile strain in Ge (0.7–1.96%) sufficient optical carrier confinement. The direct band-to-band gain, threshold current density (Jth), lo...