ZnO/Si nanowire arrays with hierarchical architecture were synthesized by solution method with ZnO seed layer grown by atomic layer deposition and magnetron sputtering, respectively. The photocatalytic activity of the as-grown tree-like arrays was evaluated by the degradation of methylene blue under ultraviolet light at ambient temperature. The comparison of morphology, crystal structure, optic...

optical modeling was applied for obtaining absorbance spectra and band gap values for different morphology of zno semiconductor. in optical modeling, the relative permittivity scalars of zinc oxide coral like nanorods were calculated using the bruggeman homogenization formalism. zno nano rods (zonrs) as a nucleus layer were fabricated on the indium tin oxide (ito) by chronoamperometry (ca) in a...

Solution-processed zinc oxide (ZnO)-based planar heterojunction perovskite photovoltaic device is reported in this study. The photovoltaic device benefits from the ZnO film as a high-conductivity and high-transparent electron transport layer. The optimal electron transport layer thickness and post-baking temperature for ZnO are systematically studied by scanning electron microscopy, photolumine...

P3HT layers with a thickness of ∼5 nm were deposited on bare and TiO2-covered ZnO ripple structures. The ZnO ripples were prepared wet-chemically and a TiO2 layer with a thickness less than 5 nm was prepared by atomic layer deposition. Under humid air and visible light illumination, the oxidation behaviors of P3HT on these surfaces were studied using photoelectron spectroscopy. It was found tha...

High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 mm were grown at different growth temperatures of 350, 450 and 550 1C, followed by identical high-temperature (HT) ZnO f...

Quantifying and characterising atomic defects in nanocrystals is difficult and low-throughput using the existing methods such as high resolution transmission electron microscopy (HRTEM). In this article, using a defocused wide-field optical imaging technique, we demonstrate that a single ultrahigh-piezoelectric ZnO nanorod contains a single defect site. We model the observed dipole-emission pat...

The authors demonstrate 1.6 GHz surface acoustic wave SAW generation using interdigital transducers patterned by e-beam lithography on a thin ZnO piezoelectric film deposited on an InP substrate. The highly oriented, dense, and fine-grain ZnO film with high resistivity was deposited by radio frequency magnetron sputtering and was characterized by x-ray diffraction, scanning electron microscopy,...

An epitaxial ZnO heterojunction light-emitting diode with an n-ZnO/MgO/TiN/n+-Si structure is produced by pulsed-laser deposition. By introducing a thin MgO/TiN buffer and a low temperature (LT) ZnO buffer, layer-by-layer growth of high quality ZnO epi-layer on Si(1 1 1) has been realized, which was confirmed by in situ reflection high-energy electron diffraction (RHEED), transmission electron ...

Photoelectrodes made of submicrometer-sized aggregates of ZnO nanocrystallites coated with TiO2 layer by atomic layer deposition with different annealing temperatures were investigated for dye-sensitized solar cells. Although the annealing at 350 C is commonly used for the ZnO aggregates in order to preserve the desired large surface area and mesoporous structure, the presence of ALD-TiO2 layer...