68Ge/68Gaジェネレータ（Galli Eo®, 1780 MBq）からの漏洩線量，溶出操作による放射性物質の飛散・漏洩，周辺の汚染を15ヵ月，作業者の被ばく線量を8ヵ月に亘って評価した。ジェネレータの最大表面線量は150 µSv/hであり，68Geの減衰に伴って低下した。放射性物質の飛散，周辺の汚染は検出されなかった。溶出操作時の作業者の被ばく線量は1溶出あたり5 µSv以下であった。以上，本ジェネレータの安全性が確認された。

We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction to an enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows us to deduce the effective density of states of (G...

Let O denote the ring of integers in a p-adic local field. Recall that O-modules are formal groups with an O-action such that the induced action on the Lie algebra is via scalars. In the paper this notion is generalised to finite flat group schemes. It is shown that the usual properties carry over. For example, Cartier duality holds with the multiplicative group replaced by the Lubin–Tate group...

Six new compounds [(CpTi)X, Cp=upsilon(nabla)-c(nabla)H(nabla), X=Ge, Ga, B) have been prepared and their Keggin structures determined by elementary analysis, IR, UV, (infinity)H NMR and (infinity for all)WNMR spectrometry. The results show that the complexes retain Keggin structure. The complexes exhibit antitumoral activity in vitro as shown by MTT experiment.

Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with 100 cubic anisotropy. A change in the magnetic easy axis from [100] ...

We define Hodge structures as representations, and introduce the Mumford–Tate group MT(H) of a rational Hodge structure. We give a characterization of MT(H) based on properties of reductive groups, and study it for elliptic curves and their powers. We define what it means for a Hodge structure to arise from an abelian variety (as is the case for K3 surfaces), and then focus on cases in which th...

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, for both low (1%) and high (13%) Mn doping values, the electronic character of the states near the top of the valence band. Magnetization and temperature-dependent core-level photoemission spectra reveal how the delocalized cha...