A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...

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a r t i c l e i n f o Based on previous reports, showing that zirconium alloying to Ti 1 − x Al x N hard coatings can increase their thermal stability, we study in detail the interaction of bias potential and Al content on structure, hardness, thermal stability, and oxidation resistance of arc evaporated Ti 1 − x − y Al x Zr y N hard coatings. For moderate Al-contents, Ti 0.49 Al 0.44 Zr 0.07 N...

Interdiffusion in Ti-rich β solid solutions Ti–Al–Zr alloys was investigated at 1473 K. In the alloys, main interdiffusion coefficients (i.e., and , respectively) cross coefficients, have positive values, as well a slight concentration dependence. The values of are larger than those . Ti–Al–X (= V, Cr, Fe, Co, Zr) Repulsive interactions occur between Al X atoms because ratio to ones sign. On ot...

Aluminum is commonly used as fuel additive for propellants, incendiaries, and explosives. The main limitation to its use lies in comparatively slow ignition and oxidation/combustion kinetics. Performance can be significantly improved if pure aluminum is substituted by thermodynamically less stable alloys. In this context, mechanical alloys in the aluminum-rich section of the Al-Ti binary system...

Metastable Ti1-xAlxN (0.4 ≤ x ≤ 0.76) films are grown using a hybrid approach in which high-power pulsed magnetron sputtering (HIPIMS) is combined with dc magnetron sputtering (DCMS). Elemental Al and Ti metal targets are co-sputtered with one operated in HIPIMS mode and the other target in DCMS; the positions of the targets are then switched for the next set of experiments. In both cases, the ...