نتایج جستجو برای: حافظه dram
تعداد نتایج: 6485 فیلتر نتایج به سال:
OBJECTIVE The objective of this study was to describe the profile of a cohort of patients who presented to a Neuro-Emotional Technique (NET) clinic. This study investigated the change in the Distress and Risk Assessment Method (DRAM) outcome measure score after a 3-month course of NET was administered to participants. DESIGN AND SETTING This was an uncontrolled cohort study in private practic...
The anticipated explosive growth of pervasive and mobile computing devices that are typically constrained by energy has brought hardware and software techniques for energy conservation into the spotlight. While there have been several studies and proposals for energy conservation for CPUs and peripherals, energy optimization techniques for selective operating mode control of DRAMs have not been...
The growth in electronics and the computer market has led to an increase in demand for semiconductor devices and the accompanying sustained innovation. Yet with the consequent requirements for huge capital investment and research and development into the fast changing technology, semiconductor manufacturers are faced with substantial risks. Whence the analyses of the market structure and the fo...
Recently DRAM and PRAM hybrid main memory organization has been studied in order to address the high levels of energy dissipation in DRAM based main memory. It is expected that this new memory architecture will be used soon in mobile computers which use NAND Flash memory based storages. In such computers, legacy operating system functionalities like file system and memory system should be modif...
We fabricated a novel in-line conductive atomic force microscopy (C-AFM), which can analyze the resistive failures and examine process variance with an exact-positioning capability across the whole wafer scale in in-line DRAM fabrication process. Using this in-line C-AFM, we introduced a new, non-destructive diagnosis for resistive failure in mobile DRAM structures. Specially, we focused on the...
This article surveys the current state of phase-change memory (PCM) as a nonvolatile memory technology set to replace flash and DRAM in modern computerized systems. It has been researched and developed in the last decade, with researchers providing better architectural designs which address the technology’s main challenges—its limited write endurance, potential long latency, high energy writes,...
In this paper, we address the severe performance gap caused by high processor clock rates and slow DRAM accesses. We show that even with an aggressive, next-generation memory system using four Direct Rambus channels and an integrated one-megabyte level-two cache, a processor still spends over half of its time stalling for L2 misses. Large cache blocks can improve performance, but only when coup...
Tumor suppressor p53-dependent apoptosis is thought to be one of the most important tumor-suppressive mechanisms in human tumorigenesis. Till date, "super p53" mutants exhibiting more potent ability to induce apoptosis than wild-type p53 have been reported. These super p53s may provide a clue for development of novel therapeutic targets. However, the major mechanism underlying the super p53-dep...
This paper proposes Built-In Self-Repair Analyzer (BISR) strategy with Redundancy which is an effective yieldenhancement strategy for embedded memories. It consists of a Built-In Self-Test (BIST) module, a Built-In Address-Analysis (BIAA) module and a Multiplexer (MUX) module. The BISR is designed flexible so that it can provide four operation modes to SRAM users. The feature of the proposed BI...
The memory system is a fundamental performance and energy bottleneck in almost all computing systems. Recent system design, application, and technology trends that require more capacity, bandwidth, efficiency, and predictability out of the memory system make it an even more important system bottleneck. At the same time, DRAM technology is experiencing difficult technology scaling challenges tha...
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