نتایج جستجو برای: aluminium oxide al2o3

تعداد نتایج: 199971  

2016
Lingwei Ma Yu Huang Mengjing Hou Jianghao Li Zhengjun Zhang

High-temperature surface-enhanced Raman scattering (SERS) sensing is significant for practical detections, and pinhole-containing (PC) metal@oxide structures possessing both enhanced thermal stability and superior SERS sensitivity are served as promising SERS sensors at extreme sensing conditions. Through tuning the Al2O3 precursors' exposure time during atomic layer deposition (ALD), Al2O3 she...

2014
Massimo Corsalini Daniela Di Venere Francesco Pettini Gianluca Stefanachi Santo Catapano Antonio Boccaccio Luciano Lamberti Carmine Pappalettere Stefano Carossa

The purpose of this study is to compare the shear bond strength of different resin bases and artificial teeth made of ceramic or acrylic resin materials and whether tooth-base interface may be treated with aluminium oxide sandblasting. Experimental measurements were carried on 80 specimens consisting of a cylinder of acrylic resin into which a single tooth is inserted. An ad hoc metallic frame ...

2008
Daphne E. Keller Diek C. Koningsberger Bert. M. Weckhuysen

The effect of the point of zero charge (PZC) of the support oxide (Al2O3,Nb2O5, SiO2 and ZrO2) on the molecular structure of hydrated vanadium oxide specieshas been investigated with EXAFS spectroscopy for low-loaded vanadium oxidecatalysts. It was found that the degree of clustering (i.e., the V---V coordinationnumber) and the V---V distance increase with decreasing PZC of ...

2010
J. Triska J. F. Wager

The bias stability of zinc-tin-oxide ZTO thin-film transistors TFTs with either Al2O3 gate dielectrics deposited via atomic layer deposition ALD or SiO2 gate dielectrics deposited via plasma-enhanced chemical vapor deposition PECVD was compared. Both device types showed incremental mobility 11 cm2 /V s, subthreshold slopes 0.4 V /dec, and ION / IOFF ratios of 107. During repeated ID-VGS sweepin...

2014
H. L. Aldridge K. S. Jones A. G. Lind M. E. Law C. Hatem

Articles you may be interested in Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing Appl. Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In0.53Ga0.47As/Al2O3 film systems Appl.

Journal: :iranian journal of chemistry and chemical engineering (ijcce) 2007
mahmood abdollahy hojat naderi

the solvent extraction of gallium from a concentrated jajarm bayer process liquor containing 164.90 g/l of na2o, 86.70 g/l of al2o3 and 106.02 ppm of gallium was investigated using 10 vol.% kelex100, a 7-alkyl substituted-8 hydroxyquinoline as an extractant, 10 vol.% etanol as a modifier and kerosene as a diluent. at (vo :va = 1.0:1.0) organic to aqueous phase ratio and at room temperature, 93....

Journal: :Processes 2021

The main problem during the production of castings from aluminium alloys is presence reoxidation, which negatively affects final casting quality. Liquid metal surface reacts with surrounding atmosphere and oxide layer Al2O3 formed on its surface. occurs when entrained to internal volume melt by turbulence double layers are formed, also known as “bifilms”. Its formation related velocity gating s...

2016
Quanquan Han Rossitza Setchi Sam L. Evans Chunlei Qiu

The selective laser melting (SLM) of aluminium-based composites continues to be a challenge due to the high reflectivity, high thermal conductivity and oxidation of aluminium, all of which directly influence the thermal performance of each layer during SLM. Due to the extremely rapid melting and cooling rate of aluminium, however, it is difficult to measure thermal performance within practical ...

2006
Miles E. Lopes

Atomic layer deposition (ALD) was used to grow aluminum oxide (Al2O3) on n-type Si (100) substrates at several temperatures 100-200◦C. The effect of growth temperature on the Al2O3-Si interface was probed using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. From these measurements, oxide charge density, interface-trapped charge density, and average interface electron trap...

2017
Il Hee Kim Hyun Ook Seo Eun Ji Park Sang Wook Han Young Dok Kim

Using a chemical vapor deposition method with regulated sample temperatures under ambient pressure conditions, we were able to fully decorate the internal structure of a mesoporous Al2O3 bead (~1 mm in particle diameter) with iron oxide nanoparticles (with a mean lateral size of less than 1 nm). The iron oxide-decorated Al2O3 showed a high CO oxidation reactivity, even at room temperature. Very...

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