نتایج جستجو برای: and gan

تعداد نتایج: 16832066  

Journal: :Gastroenterology 2011
Hiroko Oshima Kyoji Hioki Boryana K Popivanova Keisuke Oguma Nico Van Rooijen Tomo-O Ishikawa Masanobu Oshima

BACKGROUND & AIMS Helicobacter pylori infection induces an inflammatory response, which can contribute to gastric tumorigenesis. Induction of cyclooxygenase-2 (COX-2) results in production of prostaglandin E(2) (PGE(2)), which mediates inflammation. We investigated the roles of bacterial infection and PGE(2) signaling in gastric tumorigenesis in mice. METHODS We generated a germfree (GF) colo...

2003
Christoph Adelmann Julien Brault Guido Mula Bruno Daudin Jörg Neugebauer

We study the adsorption behavior of Ga on ~0001! GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. Based on the experimental results we find that for substrate temperatures and Ga fluxes typically used in molecular-beam epitax...

2018
Chaoyue Wang Chang Xu Xin Yao Dacheng Tao

Generative adversarial networks (GAN) have been effective for learning generative models for real-world data. However, existing GANs (GAN and its variants) tend to suffer from training problems such as instability and mode collapse. In this paper, we propose a novel GAN framework called evolutionary generative adversarial networks (E-GAN) for stable GAN training and improved generative performa...

2016
Tongtong Zhu Tao Ding Fengzai Tang Yisong Han Muhammad Ali Tom Badcock Menno J. Kappers Andrew J. Shields Stoyan K. Smoukov Rachel A. Oliver

Non- and semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we report a facile method to obtain low defect density non- and semipolar heteroepitaxial GaN via selective area epit...

2010
Meng-Hung Lin Hua-Chiang Wen Yeau-Ren Jeng Chang-Pin Chou

In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred o...

2016
Jason Lowery Nikhil Jain Edward R. Kuczmarski Saleemulla Mahammad Anne Goldman Vladimir I. Gelfand Puneet Opal Robert D. Goldman Thomas M. Magin

Giant axonal neuropathy (GAN) is a rare disease caused by mutations in the GAN gene, which encodes gigaxonin, an E3 ligase adapter that targets intermediate filament (IF) proteins for degradation in numerous cell types, including neurons and fibroblasts. The cellular hallmark of GAN pathology is the formation of large aggregates and bundles of IFs. In this study, we show that both the distribut...

2016
Tae-Hee Kim Sooseok Choi Dong-Wha Park

Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO₃)₃∙xH₂O) was used as a raw material and NH₃ gas was used as a nitridation source. Additionally, melamine (C₃H₆N₆) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga₂O₃). Argo...

2008
E. R. Glaser J. A. Freitas G. C. Braga W. E. Carlos M. E. Twigg D. D. Koleske R. L. Henry M. Leszczynski I. Grzegory T. Suski S. Porowski S. S. Park K. Y. Lee R. J. Molnar

Magnetic resonance experiments, including optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR), have been performed on Si-doped homoepitaxial GaN layers grown by MOCVD and on high quality, free-standing (B200mm-thick) GaN grown by HVPE. This allowed us to obtain information on the properties of native defects and dopants in GaN with a significantly reduced dens...

2007
Xinyu Wang Jesse Cole Amir M. Dabiran Heiko O. Jacobs

This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...

Journal: :Advanced materials 2017
Atsunori Tanaka Woojin Choi Renjie Chen Shadi A Dayeh

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and s...

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