Cadmium sulphide (CdS) thin films were deposited onto glass substrates by chemical bath deposition (CBD) from a bath containing cadmium acetate, ammonium acetate, thiourea and ammonium hydroxide. The CdS films were annealed in air at various temperatures (350, 400 and 450 °C) for 60 minutes, and times (5, 15, 30, 45 and 60 minutes) at constant temperature (400 °C) in order to investigate the in...

A plan-view TEM study has been made of the distribution, geometry and the time-dependent annealing behavior of type II (end of range) dislocation loops introduced by 1 x 10’5/cm2 50 keV Si+ implantation into silicon. The size and density distributions of the loops have been quantitatively analyzed, and loop growth behavior has been compared with that predicted by a bulk-diffusion mechanism and ...

The capacitance and leakage current properties of multilayer La2O3/Al2O3 dielectric stacks and LaAlO3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better ...

We have investigated the effects of thermal annealing on ex-situ chemically vapor deposited submonolayer graphene islands on polycrystalline Cu foil at the atomic-scale using ultrahigh vacuum scanning tunneling microscopy. Low-temperature annealed graphene islands on Cu foil (at ∼430 °C) exhibit predominantly striped Moiré patterns, indicating a relatively weak interaction between graphene and ...

We studied the optical properties of metalorganic chemical vapour deposited (MOCVD) InGaN/GaN multiple quantum wells (MQW) subjected to nitrogen (N) implantation and post-growth annealing treatments. The optical characterization was carried out by means of temperature and excitation density-dependent steady state photoluminescence (PL) spectroscopy, supplemented by room temperature PL excitatio...

39 { Introduce algorithms to keep errors within a constant factor of the temperature. Use x5 and x6 to help estimate the factor. { Increase the number of annealing steps performed at each temperature to compensate for errors. Use x6.3 to help estimate the number of steps. { Weigh the performance beneets of parallelism or sloppy computations against the increased annealing steps to obtain the sa...

We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic forc...

The regeneration of UV-written long period gratings (LPG) in boron-codoped germanosilicate "W" fibre is demonstrated and studied. They survive temperatures over 1000 °C. Compared with regenerated FBGs fabricated in the same type of fibre, the evolution curves of LPGs during regeneration and post-annealing reveal even more detail of glass relaxation. Piece-wise temperature dependence is observed...

The influence of post deposition annealing (PDA) up to temperatures of TPDA=900°C on the morphology and agglomeration behavior of ambient temperature sputter deposited platinum onto anodic aluminum oxide templates is investigated. Both cluster agglomeration and diffusion processes occur on the surface and on the inner channel walls. When the annealing temperature is less than 400°C, particles a...

This work describes the formation of reduced graphene oxide-coated copper oxide and copper nanoparticles (rGO-Cu2ONPs, rGO-CuNPs) on the surface of a copper foil supporting graphene oxide (GO) at annealing temperatures of 200-1000 °C, under an Ar atmosphere. These hybrid nanostructures were developed from bare copper oxide nanoparticles which grew at an annealing temperature of 80 °C under nitr...