نتایج جستجو برای: asymmetry quantum dot

تعداد نتایج: 343251  

Journal: :Journal of the American Chemical Society 2012
Yolanda Justo Bart Goris John Sundar Kamal Pieter Geiregat Sara Bals Zeger Hens

Pb cations in PbS quantum rods made from CdS quantum rods by successive complete cationic exchange reactions are partially re-exchanged for Cd cations. Using STEM-HAADF, we show that this leads to the formation of unique multiple dot-in-rod PbS/CdS heteronanostructures, with a photoluminescence quantum yield of 45-55%. We argue that the formation of multiple dot-in-rods is related to the initia...

Journal: :The Journal of The Institute of Image Information and Television Engineers 2014

Journal: :Journal of Physics: Conference Series 2010

2008
F. Simmel T. Heinzel D. A. Wharam

The fluctuations and the distribution of the conductance peak spac-ings of a quantum dot in the Coulomb-blockade regime are studied and compared with the predictions of random matrix theory (RMT). The experimental data were obtained in transport measurements performed on a semiconductor quantum dot fabricated in a GaAs-AlGaAs heterostruc-ture. It is found that the fluctuations in the peak spaci...

Journal: :Physical review 2022

We consider a nanostructure consisting of semiconductor quantum dot coupled to metal nanoparticle, and we show with numerical simulations that the exciton state can be robustly generated from ground even for small interparticle distances, using conventional chirped pulses Gaussian envelope. The asymmetry observed in final population respect chirp sign applied is explained nonlinear density matr...

2012
Wei-Yuan Tu Wei-Min Zhang Franco Nori

Bonding and antibonding states of artificial molecules have been realized in experiments by directly coupling two quantum dots. Without a direct coupling between two nearby quantum dots, here we show that under a very unusual condition (i.e., a large asymmetrical couplings to the leads at a large bias) continuous coherence control of double-dot charge states can be achieved by changing the flux...

2014
Marek Korkusinski Pawel Hawrylak

We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum do...

2005
M. Braun

– We suggest a series of transport experiments on spin precession in quantum dots coupled to one or two ferromagnetic leads. Dot spin states are created by spin injection and analyzed via the linear conductance through the dot, while an applied magnetic field gives rise to the Hanle effect. Such a Hanle experiment can be used to determine the spin lifetime in the quantum dot, to measure the spi...

Journal: :Microelectronics Journal 2009
G. Trevisi L. Seravalli P. Frigeri Mirko Prezioso J. C. Rimada E. Gombia R. Mosca L. Nasi C. Bocchi S. Franchi

We present a study on the effects of quantum dot coverage on the properties of InAs dots embedded in GaAs and in metamorphic In0.15Ga0.85As confining layers grown by molecular beam epitaxy on GaAs substrates. We show that redshifted emission wavelengths exceeding 1.3 μm at room temperature were obtained by the combined use of InGaAs confining layers and high quantum dot coverage. The use of hig...

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