نتایج جستجو برای: charge injection

تعداد نتایج: 296294  

2015
Jan C. Brauer Arianna Marchioro Arun A. Paraecattil Ahmad A. Oskouei

Electron injection from a photoexcited molecular sensitizer into a wide-bandgap semiconductor is the primary step toward charge separation in dye-sensitized solar cells (DSSCs). According to the current understanding of DSSCs functioning mechanism, charges are separated directly during this primary electron transfer process, yielding hot conduction band electrons in the semiconductor and positi...

Journal: :Science 2001
V P LaBella D W Bullock Z Ding C Emery A Venkatesan W F Oliver G J Salamo P M Thibado M Mortazavi

We report a large spin-polarized current injection from a ferromagnetic metal into a nonferromagnetic semiconductor, at a temperature of 100 Kelvin. The modification of the spin-injection process by a nanoscale step edge was observed. On flat gallium arsenide [GaAs(110)] terraces, the injection efficiency was 92%, whereas in a 10-nanometer-wide region around a [111]-oriented step the injection ...

Journal: :Physical review letters 2010
P A Sloan S Sakulsermsuk R E Palmer

We report the nonlocal desorption of chlorobenzene molecules from the Si(111)-(7×7) surface by charge injection from the laterally distant tip of a scanning tunneling microscope and demonstrate remote control of the manipulation process by precise selection of the atomic site for injection. Nonlocal desorption decays exponentially as a function of radial distance (decay length ∼100  A) from the...

1998
Young-Bog Park Dieter K. Schroder

The degradation of thin tunnel gate oxide under constant Fowler–Nordheim (FN) current stress was studied using flash EEPROM structures. The degradation is a strong function of the amount of injected charge density (Qinj), oxide thickness, and the direction of stress. Positive charge trapping is usually dominant at low Qinj followed by negative charge trapping at high Qinj, causing a turnaround ...

2016
Alberto Morgante M. Franchi P. Lucarini M. Delgado J. J. Sousa F. Stellacci Luca Floreano

Interface processes strongly affect the performances and efficiency of organic based devices. The integration of 2D materials like graphene in organic devices (for example as electrodes) is expected, on the other hand, to improve the overall device performances. There is a need therefore for a deeper understanding and control of processes like charge transfer (CT) at interfaces between organic ...

Journal: :Physical review letters 2014
X L Xu J F Hua F Li C J Zhang L X Yan Y C Du W H Huang H B Chen C X Tang W Lu P Yu W An C Joshi W B Mori

The evolution of beam phase space in ionization injection into plasma wakefields is studied using theory and particle-in-cell simulations. The injection process involves both longitudinal and transverse phase mixing, leading initially to a rapid emittance growth followed by oscillation, decay, and a slow growth to saturation. An analytic theory for this evolution is presented and verified throu...

Journal: :Journal of diabetes science and technology 2012
Roderike Pohl Robert Hauser Ming Li Errol De Souza Robert Feldstein Richard Seibert Koray Ozhan Nandini Kashyap Solomon Steiner

BACKGROUND In order to enhance the absorption of insulin following subcutaneous injection, excipients were selected to hasten the dissociation rate of insulin hexamers and reduce their tendency to reassociate postinjection. A novel formulation of recombinant human insulin containing citrate and disodium ethylenediaminetetraacetic acid (EDTA) has been tested in clinic and has a very rapid onset ...

2015
G. Rodrigues Aruna Asaf Ali

Beam intensities achievable from high performance ECR sources for highly charged ions are limited by the high space charge. For high performance ECR sources, the stray magnetic field of the source can provide focusing against the space charge blow-up of the beam when used with the Direct Plasma Injection Scheme (DPIS) developed for laser ion sources. A combined extraction/matching system has be...

2015
Bongani C. Mabuza Saurabh Sinha

Purpose – The purpose of this paper was to present the results of the three types of FG transistors that were investigated. The reliability issues of oxide thickness due to programming, fabrication defects and process variation may cause leakage currents and thus charge retention failure in the floating gate (FG). Approach – The tunnelling and electron injection methods were applied to program ...

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