Can isotropic wet chemical etching be controlled with a spatial resolution at the nanometer scale, especially, for the repetitive microfabrication of hierarchical 3D m-nanostructures on the continuously curved surface of functional materials? We present an innovative wet chemical etching method called “electrochemical buckling microfabrication”: first, a constant contact force is applied to gen...

In many dielectrics, swift heavy ions of MeV-GeV energy produce tracks of a few nm in diameter. The track morphology depends on energy loss (dE/dx), particularly the formation of a continuous damage trail requires a critical (dE/dx)c. Below this threshold, chemical etching of discontinuous tracks exhibits inhomogeneous pore sizes and the track etching efficiency drops below unity. In the recent...

Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microsco...

A quick and dependable technique has been developed that allows us to selectively produce anodized TiO2 in the form of nanotubes. The process employs mild chemical conditions and ambient temperature. The method can consistently produce nearly 100% surface coverage of nanotubes within 10 min of anodizing. Anodizing in relatively high pH electrolytes for 1 hour permitted us to produce nanotubes o...

The separation of chemical vapor deposited (CVD) graphene from the metallic catalyst it is grown on, followed by a subsequent transfer to a dielectric substrate, is currently the adopted method for device fabrication. Most transfer techniques use a chemical etching method to dissolve the metal catalysts, thus imposing high material cost in large-scale fabrication. Here, we demonstrate a highly ...

A method for fabricating silicon quantum wires with SiO2 boundaries is presented. It is accomplished by first growing Si/SiGe/Si heterostructure on silicon substrate with very low-pressure chemical vapor deposition, followed by lithography and reactive ion etching to form trench structures. Finally, the selective chemical etching of SiGe over silicon and subsequent thermal oxidation are carried...

Tapered fibre tips fabricated using mechanical polishing method is studied. The fibre tips are formed by sequential polishing flat-ended single mode fibres with decreasing aluminium oxide polishing film grit size. Based on the proposed technique, tapered fibre tips with cone angle ranging from 30° to 130° are fabricated by controlling the polishing angle. Besides the variety of cone angle, cons...

We demonstrate an improved femtosecond laser irradiation followed by chemical etching process to create complex three-dimensional (3D) microchannels with arbitrary length and uniform diameter inside fused silica. A segmented chemical etching method of introducing extra access ports and a secondary power compensation is presented, which enables the fabrication of uniform 3D helical microchannels...

porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. sem, ftir and pl have been used to characterize the morphological and optical properties of porous silicon. the influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. it is observed that pore size increases with etching tim...

UNLABELLED Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared ...