نتایج جستجو برای: cmos digital integrated circuit
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This paper describes the experience in teaching integrated circuit design using an educational tool called Microwind through a Project-Based Learning approach. The evolution of the tool in the context of technology scale down is described, with focus on nanoscale technologies. An evaluation of the courses taught in two institutions (INSA France, and UniSA Australia) shows high levels of student...
This paper deals with two types of inverter structure design using CMOS and adiabatic technique. Power consumption is the important and basic parameters of any kind of digital integrated circuit (IC). There is always a tradeoff between power and performance to meet the systems requirement. System cost is directly affected by power. Adiabatic circuits are those circuits which work on the princip...
This paper discusses architectural and circuit-level aspects related to hardware realizations of fuzzy controllers. A brief overview on fuzzy inference methods is given focusing on chip implementation. The singleton or zero-order Sugeno’s method is chosen since it offers a good tradeoff between hardware simplicity and control efficiency. The CMOS microcontroller described herein processes infor...
This paper presents CMOS circuits for integrated analog filters at very high frequencies, based on transconductance-C integrators. First a differential transconductance element based on CMOS inverters is described. With this circuit a linear, tunable integrator for very-high-frequency integrated filters can be made. This integrator has good linearity properties (1% relative gm error for 2-V,, i...
Abstmcf A CMOS neural network integrated circuit is discussed, which was designed for very high speed applications. This full-custom, mixed analog-digital chip implements a fully connected feedforward neural network with 70 inputs, 6 hidden layer neurons and one output neuron. The neurons perform inner product operation and have sigmoid-like activation function. The 70 network inputs and the ne...
We report a p channel thin ®lm transistor (TFT) made of directly deposited microcrystalline silicon (lc-Si). The lc-Si channel material is grown by plasma-enhanced chemical vapor deposition (PECVD) using dc excitation of a mixture of SiH4, SiF4 and H2, in a process similar to the deposition of hydrogenated amorphous silicon (a-Si:H). The deposition temperature for the lc-Si is 320°C and the hig...
This paper presents a review on various CMOS voltage level shifters. A voltage level-shifter shifts the level of output voltage from a digital circuit. Level Shifter circuits are compared in terms of output voltage level, power consumption and delay. The input voltage is set to 1.6V. Simulations have been carried out in SPICE based on TSMC 0.18μm CMOS technology. Keywords—CMOS, dual voltage sup...
Analog and mixed signal design has always been very interesting and when it comes to the design of high-speed CMOS and SiGe BiCMOS optical transceivers it becomes even more challenging. Special care has to be taken while doing the layout of such a circuit that operates at a frequency of 1 Gbps or higher. The focus of our first work was to layout an optical driver and receiver stage capable of h...
Spintronic oscillators are nanodevices that are serious candidates for CMOS integration due to their compactness and easy frequency tunability. For a crystal oscillator to work, there must exist a feedback path with properly What practical circuits do is design such that we have a phase-shift of 180. A double balanced down conversion oscillator mixer using 90 nm CMOS technology is proposed in a...
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