We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the diff...

The atomic mechanisms of diffusion in alloys are complex due to the variations of migration energies with environment and the correlations induced by short-range order between the different components. We present a first-principles approach for calculating vacancy-mediated diffusion coefficients in crystalline binary alloys and apply it to obtain the interdiffusion coefficient of Al(1-x)Lix. Th...

We have developed an atomistic model for dopant diffusion in SiGe structures and we have implemented it in the kinetic Monte Carlo process simulator DADOS. The model takes into account (i) composition and stress effects on the diffusivity of interstitials, vacancies and dopants, (ii) SiGe interdiffusion, (iii) dopant segregation and (iv) the modifications of band-gap and charge levels. The mode...

Using the equation of continuity and equations for the atomic flux we develop the finitedifference-scheme program DIMES-C to calculate concentration profiles and layer thickness’ in multiphase binary systems after diffusion annealing. In this way we can calculate problems with arbitrary initial concentration distributions, concentration dependent interdiffusion coefficients, and general phase d...

The ability to merge two droplets is an important component of droplet-based lab-on-a-chip devices, yet flow-induced coalescence is difficult to achieve due to long film drainage times compared with relatively short residence times. We examine droplet collisions at a simple microfluidic T-junction and characterize the response for a wide range of droplet sizes and speeds. We find that three pri...