Based on theoretical analysis, first-principles calculations, and experimental observations, we establish a generic guiding principle, embodied in generalized electron counting (GEC), that governs the surface reconstruction of compound semiconductors induced by different metal adsorbates. Within the GEC model, the adsorbates serve as an electron bath, donating or accepting the right number of e...

In this chapter, the physical properties of group III-nitride compound semiconductors are reviewed in the context to act as semiconducting material in photoelectrocatalytic solar fuel structures. The band alignments in the InN-GaN-AlN-InN alloy system are summarized and discuss with respect to potential catalysts HOMO and LUMO states, providing efficient charge transfer in photoelectrochemical ...

Nanoindentation-induced multiple pop-ins were observed in the load-displacement curves when the mechanical responses of AlN films grown on c-plane sapphire substrates were investigated by using Berkovich indenters. No evidence of phase transformation is revealed by cross-sectional transmission electron microscopy (XTEM) and selected area diffraction (SAD) analyses. Instead XTEM observations sug...

The ability of Si CMOS to continue to scale down transistor size while delivering enhanced logic performance has recently come into question. An end to Moore’s Law threatens to bring to a halt the microelectronics revolution: a historical 50 year run of exponential progress in the power of electronics that has profoundly transformed human society. The outstanding transport properties of certain...

Abstract: In the last two decades, the Maximum Entropy Principle (MEP) has been successfully employed to construct macroscopic models able to describe the charge and heat transport in semiconductor devices. These models are obtained, starting from the Boltzmann transport equations, for the charge and the phonon distribution functions, by taking—as macroscopic variables—suitable moments of the d...

We report dramatic improvements in the stability and crystallinity arising from partial fluorination of soluble anthradithiophene derivatives. These fluorinated materials still behave as p-type semiconductors but with dramatic increases in thermal and photostability compared to the non-fluorinated derivatives. The triethylsilyl-substituted material forms highly crystalline films even from spin-...

We calculate the transverse effective charges of zinc-blende compound semiconductors using Harrison’s tight-binding model to describe the electronic structure. Our results, which are essentially exact within the model, are found to be in much better agreement with experiment than previous perturbation-theory estimates. Efforts to improve the results by using more sophisticated variants of the t...

Metal-insulator-IV-VI compound semiconductor tunnel junctions were formed for both single and polycrystalline semiconductor material. I-V and conductance characteristics were taken as a function of temperature, and magnetic field. The experimental results were interpreted in terms of a conventional tunneling theory, and yielded information on Fermi energies, band gaps, temperature dependence of...

We present a scheme of surface-sensitive nuclear magnetic resonance in optically pumped semiconductors, where an NMR signal from a part of the surface of a bulk compound semiconductor is detected apart from the bulk signal. It utilizes optically oriented nuclei with a long spin-lattice relaxation time as a polarization reservoir for the second (target) nuclei to be detected. It provides a basis...

background: new treatment modalities are developed with the aim of escalating tumor absorbed dose and simultaneously sparing the normal structures. the use of nanotechnology in cancer treatment offers some possibilities including destroying cancer tumors with minimal damage to healthy tissues. zinc oxide nanoparticles (zno nps) are wide band gap semiconductors and seem to have a good effect on ...