Electromechanical materials are very useful as actuators when small weight, and low to moderate force are needed to manipulate small objects. The Liquid Crystal Material Research center located in Boulder, Colorado in interested in developing a novel liquid crystal based electromechanical elastomer. De Vries liquid crystals organize into layers where the director is perpendicular to the layer n...

The crystal structure of [Ph4P][NCS]·HNCS is reported. This is the first structural determination of isothiocyanic acid and hydrogen bonding between the NCS anion and HNCS fragment explored using computational chemistry.

CRYSTAL STRUCTURE OF THE PUTIDAREDOXIN REDUCTASEPUTIDAREDOXIN ELECTRON TRANSFER COMPLEX Irina F. Sevrioukova, Thomas L. Poulos, and Inna Y. Churbanova⊥, From the Departments of Molecular Biology and Biochemistry, Chemistry and Pharmaceutical Sciences, University of California, Irvine, California 92697-3900 Running title: Crystal structure of the Pdr-Pdx complex Address correspondence to: Irina ...

Abstract Element incorporation and partitioning during the evolution of clay minerals have significant implications for element cycling in geochemical processes. The main aim this experimental study is to further our understanding redistribution crystal growth smectite under different physicochemical conditions. precursors (i.e., pure Mg- Ni-saponite) were separately prepared by hydrothermal sy...

New data are presented on the phase equilibria and crystal chemistry of the binary systems CaO-Bi2O3 and CaO-CuO and the ternary CaO-Bi2O3-CuO. Symmetry data and unit cell dimensions based on single crystal and powder x-ray diffraction measurements are reported for several of the binary CaO-Bi2O3 phases, including corrected compositions for Ca4Bi6O13 and Ca2Bi2O5. The ternary system contains no...

List of publications 1. Zeis R, Siegrist T, Kloc Ch Single-crystal field-effect transistors based on copper phthalocyanine Field-effect studies on rubrene and impurities of rubrene submitted to Chemistry of Materials High-mobility field-effect transistors based on transition metal dichalco-genides Applied Physics Letters 84 (17): 3301-3303 6. Evaluation of single crystal and thin film field-eff...