Postprocessing annealing in forming gas at 400 ◦C was performed on enhancement-mode lattice-matched InAlN/AlN/GaN high-electron-mobility transistors fabricated by selective etch of InAlN under a Pt gate. After postprocessing annealing, the device reverse gate leakage current decreased from 10−7 to 10−12 A/mm at Vgs = −1 V and Vds = 6 V, showing an ON/OFF current ratio of 10 that is the highest ...

Although studies on RC beams under shear have a history record of more than 100 years, many important issues in this context still remain that have evaded attention. The aim of the current study is to study a number of these less investigated aspects of the behavior of RC beams under shear. For this purpose, and based on the modified compression field theory, a computer program has been writte...

in this article, i try to find out what are the effects of financial variablessuch as ratio of private sector deposits to gdp and ratio of bank credit toprivate sector to gdp and value of stocks trade in tehran stockexchange to total current value of stocks and private sector liquidity togdp on total investment.we use two models to test our hypothesis the first is a model for iranand the second...