Background : Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods : Europium oxide (Eu2O3) doped ZnO films are prepared on quartz substrate using radio frequency (RF) magnetron sputtering with doping concentrat...

Ce-doped ZnO (ZnO:Ce) nanorods have been prepared through a solvothermal method and the effects of Ce-doping on the structural, optical and electronic properties of ZnO rods were studied. ZnO:Ce rods were characterized by XRD, SEM, TEM, XPS, BET, DRS and Raman spectroscopy. 5% Ce-doped ZnO rods with an average length of 130 nm and a diameter of 23 nm exhibit the highest photocatalytic activity ...

The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of...

BACKGROUND Semiconductor doped nanostructure materials have attained considerable attention owing to their electronic, opto-electronic, para-magnetic, photo-catalysis, electro-chemical, mechanical behaviors and their potential applications in different research areas. Doped nanomaterials might be a promising owing to their high-specific surface-area, low-resistances, high-catalytic activity, at...

A Sb-doped ZnO microrod array was fabricated on an Al-doped ZnO thin film by electrodeposition. Strong violet luminescence, originated from free electron-to-acceptor level transitions, was identified by temperature-dependent photoluminescence measurements. This acceptor-related transition was attributed to substitution of Sb dopants for Zn sites, instead of O sites, to form a complex with two Z...

The electronic properties of cobalt-doped ZnO were investigated through site-selective and element-sensitive x-ray-absorption spectroscopy in the vicinity of the Co L2,3 edge, the oxygen K edge, and at the Zn L3 edge. The spectroscopic measurements of the ferromagnetic cobalt-doped ZnO films appear to have additional components in the O K edge x-ray-absorption spectrum not observed in the undop...

The prospect of tuning and enhancing multiple properties of ZnO from optical, electrical, piezo to ferroelectricity/magnetism with Cu dopants will certainly spur the pursuit of facile doping methodology to immensely advance this field of research. Here, a one-step aqueous synthesis of Cu-doped ZnO nanostructured materials with effective controllability over the morphology (film to nanowire) and...

High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/...

Subsolidus phase relationships in the Ga2O3–SnO2–ZnO system were determined at 1250 ◦C using solid state synthesis and X-ray powder diffraction. The two spinels, Zn2SnO4 and ZnGa2O4, formed a complete solid solution. The optical band gap of the spinel varied with composition from 3.6 eV (Zn2SnO4) to 4.7 eV (ZnGa2O4). All samples were white and insulating except those containing Ga-doped ZnO. Th...