MOSFETs with heavily doped regions at one or both ends of the channel exhibit qualitative differences in electrical behavior compared to devices with laterally uniform channel doping. These differences include a distinct peakiness in the transconductance near threshold, asymmetries in capacitances, and a surprising decrease in the statistical variation of the peak gain factor as channel length ...

A. X. Levander, S. V. Novikov, Z. Liliental-Weber, R. dos Reis, O. D. Dubon, J. Wu, C. T. Foxon, K. M. Yu, and W. Walukiewicz Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA School of Physics and Astronomy, University of Nottingham, Notti...

A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....

Some recent experiments that provide support for the concept of topological doping in cuprate superconductors are discussed. Consistent with the idea of charge segregation, it is argued that the scattering associated with the “resonance” peak found in YBa2Cu3O6+x and Bi2Sr2CaCu2O8+δ comes from the Cu spins and not from the doped holes.

Current dogma is that performance enhancement in sport is wrong. As Pound’s response shows, this dogma is predicated mainly on the view that performance enhancement violates this ‘humanistic’ conception of what sport should be. In this chapter, we will argue that performance enhancement is inevitable and unpoliceable, that it is not against the spirit of sport and that we should remove anti-dop...

Half-Heusler alloys ~MgAgAs type! with the general formula MNiSn where M is a group IV transition metal ~Hf, Zr, or Ti! are currently under investigation for potential thermoelectric materials. These materials exhibit a high negative thermopower (240 to 2250 mV/K) and low electrical resistivity values ~0.1–8 mV cm! both of which are necessary for a potential thermoelectric material. Results are...