نتایج جستجو برای: double junction solar cell

تعداد نتایج: 2026264  

2005
Mark E. Orazem

A one-dimensional mathematical model of the liquid-junction photovoltaic cell was coupled with primary resistance calculations to predict the optimal performance of three cell configurations. Two cells are considered in which the semiconductor is i l luminated from the electrolyte side and one in which the semiconductor is i l luminated from the current-collector side. An economic analysis is p...

2017
Thomas Schnabel Erik Ahlswede

In this work, kesterite-type Cu2ZnGeSxSe4-x absorbers were prepared by a two-step process for use in thin-film solar cells. Their high band gap makes them an interesting candidate as top cells in multijunction solar cells. However, an exact tuning of the band gap is essential. Therefore, for the first time, the [S]/([S] + [Se]) ratio was controlled via addition of a variable amount of GeS durin...

2002
S. Kurtz Martha Symko-Davies Rommel Noufi Sarah Kurtz

The High-Performance Photovoltaic (HiPerf PV)Project was initiated by the U.S. Department of Energy to substantially increase the viability of photovoltaics (PV) for cost-competitive applications so that PV can contribute significantly to our energy supply and our environment in the 21st century. To accomplish this, the NCPV directs in-house and subcontracted research in high-performance polycr...

2013
A. G. Melton B. Kucukgok B-Z. Wang N. Dietz N. Lu I. T. Ferguson

InGaN epilayers have been investigated for use in photovoltaic solar cells for the past years. At present, almost all photovoltaic device structures reported have exhibited very low short circuit currents and thus very low solar conversion efficiency. This phenomenon has been attributed to point and extended defect chemistry in InGaN epilayers (e.g. vacancies, misfit dislocations, and V-defects...

2003
M. Vanecek J. Springer A. Poruba O. Kluth T. Repmann B. Rech N. Wyrsch J. Meier A. Shah

We have developed the 3-dimensional optical model for thin film silicon solar cells (amorphous, microcrystalline, single or multijunction) with nanorough surfaces/interfaces. For these cells the external quantum efficiency, short circuit current, total reflectance and all absorption losses can be computed taking into account roughness, angular distribution of scattered light, thicknesses and ex...

2013
D. Shahrjerdi S. W. Bedell B. Hekmatshoar C. Bayram D. K. Sadana

In this paper, we discuss two new paradigms for enabling costeffective III-V solar cell photovoltaics using (i) our novel layer transfer technology, called controlled spalling and (ii) new solar cell device structures. First, we present the application of the controlled spalling for making high-efficiency thin-film multijunction solar cells. Finally, a novel GaAs heterojunction solar cell struc...

Journal: :Expert Syst. Appl. 2015
B. García-Domingo Cristóbal J. Carmona Antonio J. Rivera María José del Jesús Jorge Aguilera

Concentrating photovoltaics is an innovative alternative to flat-plate module to produce cost-competitiveness electricity. It is based on the use of optical system of reduced cost which is able to concentrate the solar light on a very small surface (high efficiency solar cell). At present, this technology has a marginal position in photovoltaic market and to take off needs to increase the confi...

2009
Scott R. Messenger Edward A. Burke Robert J. Walters Jeffrey H. Warner Geoffrey P. Summers Justin R. Lorentzen Steven J. Taylor

An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP2/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code (SRIM) is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the space environment. The results are used to present a quantitative analy...

2011
Sriram Krishnamoorthy Pil Sung Park Siddharth Rajan

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm at 10 mV, and 17.7 A/cm peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable ne...

2014
Xing Sheng Myoung Hee Yun Ling Shen William L. Wilson Jin Young Kim Xiuling Li John A. Rogers

DOI: 10.1002/aenm.201400919 primarily due to the ineffective use of the entire solar spectrum. [ 1 ] Multijuction (MJ) cells, by contrast, spectrally split sunlight into sub-cells with different bandgaps, thereby providing pathways to greatly improved effi ciencies. [ 6–13 ] Conventional MJ cells require lattice matched or metamorphic epitaxial growth of the individual sub-cells. In addition, t...

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