Thermal management is extremely important for designing high-performance devices. The lattice thermal conductivity of materials strongly dependent on the structural defects at different length scales, particularly point like vacancies, line dislocations, and planar such as grain boundaries. Traditionally, McKelvey-Shockley phonon Boltzmann's transport equation (BTE) method combined with molecul...

We revisit some recents results inspired by the Peierls-Nabarro model on edge dislocations for crystals which rely fractional Laplace representation of corresponding equation. In particular, we discuss related to heteroclinic, homoclinic and multibump patterns atom dislocation function, large space time scale solutions parabolic problem, dynamics points asymptotics after possible collisions.

Scanning Kelvin probe microscopy ~SKPM! and conductive atomic force microscopy ~C-AFM! have been used to image surfaces of GaN grown by molecular beam epitaxy. Detailed analysis of the same area using both techniques allowed imaging and comparison of both surface potential variations arising from the presence of negatively charged threading dislocations and localized current leakage paths assoc...

Tangled dislocation structures inside the channels of rapid-cooled and tensile deformed aluminum single crystals were investigated by using BF-STEM. Inside channels, arrays prismatic loops belonging to primary slip system, i.e., (1 1 1)[1 0 1], mainly formed. Dislocations coplanar systems such as 1)[0 1] 0] activated due internal stresses caused dislocations pile-up cleared channels. The leave ...

We report molecular beam epitaxial growth of InAs on GaP~001!, which has the largest lattice mismatch ~11%! among all the arsenides and phosphides. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy were used to optimize the growth and characterize the epilayer. It is found that the growth mode can be controlled by the surface V/III ratio: three-dim...

This paper reports on a way to reduce the complexity of the process of left dislocation (re)construction for categorial grammar in the case of lexically assigned gaps, as an additional restriction on the complexity arising from lexical polymorphism in general. Specifying extraction sites lexically has the advantage that the combinatory explosion can be contained in the preparsing track by a spe...

We have performed multimillion-atom molecular dynamics simulations of nanoindentation on cubic silicon carbide !3C-SiC" surfaces corresponding to three different crystallographic directions, !110", !001", and !111", using pyramidal-shaped Vickers indenter with 90° edge angle. Load-displacement !P-h" curves show major and minor pop-in events during loading. Detailed analysis of the !110" indenta...

The dislocation densities, surface morphology, and strain of Gal _ x In" As/GaAs epitaxial interfaces as a function of indium composition and layer thickness have been investigated by transmission electron microscopy, medium energy ion blocking, and double-crystal x-ray diffractometry. The electron microscopy shows that in the thinnest dislocated films (90 and 160 nm, x = 0.07) 60· a dislocatio...

Addition of titanium (Ti) to ASTM A710 Grade B Cu-precipitation-strengthened steel significantly increases the impact absorbed fracture energy and reduces the ductile-to-brittle transition temperature. The effect of Ti correlates with the reduction of the amount of pearlite in the ferritic microstructure. A thorough study of the mechanical properties of Ti-modified A 710B steel is presented. In...