Thin-film transistors based on Liquid-crystalline phenylterthiophenes, 3-TTPPh-5 and 3-TTPPhF4-6 are fabricated with a spincoating method. The devices exhibit p-type operation with the mobility on the order of 10−2 cm2V−1s−1. The field-effect mobilities of the transistors using 3-TTPPh-5 and 3-TTPPhF4-6 are almost independent of the temperature above room temperature. In particular, the tempera...

Over the past three decades effort has been devoted to exploit the field-effect mechanism in chemical and biological sensors, due to the potential of these devices to provide large arrays of sensors that are label-free, low-cost, disposable and can be easily integrated in portable instrumentation. Most of this work concerned the development of ion-sensitive field-effect transistors. More recent...

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubren...

Reconfigurable Field Effect Transistors In article number 2300019, Giulio Galderisi and colleagues investigate the electrical properties of three-gated reconfigurable field effect transistors (RFETs) in harsh temperature conditions, ranging from 80 to 475 K. Resulting insights into physical mechanisms that regulate their switching are exhibited, providing useful data understand detail operation...

The central device of this thesis is the transistor. It acts like a faucet, but then for electric charge. There is a connection that is called the source, just like the water company. And the charge flows into the drain. Finally there is a handle, here called the gate, to control the flow of charge. The transistor is not an ideal faucet for electrons. For example, even when the gate is closed a...

In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform n...