In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (10(15) cm(-3)) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The i...

A novel, self-terminating electrochemical etch process is proposed for the fabrication of scanning steel micro-mirrors. The process uses single mask photolithography, and the etching step is terminated automatically, which at the same time enables the depth profile shaping of the fabricated structure. The proposed process is characterized and then used to fabricate two versions of one-dimension...

Parallel arrays of either Au or Pd nanowires were fabricated on glass substrates via the electrochemical process of lithographically patterned nanowire electrodeposition (LPNE) and then characterized with scanning electron microscopy (SEM) and a series of optical diffraction measurements at 633 nm. Nanowires with widths varying from 25 to 150 nm were electrodeposited onto nanoscale Ni surfaces ...

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were in...

In order to utilize nanostructured materials for potential solar and other energy-harvesting applications, scalable synthetic techniques for these materials must be developed. Herein we use a vapor phase conversion approach to synthesize nanowire (NW) arrays of semiconducting barium silicide (BaSi2) in high yield for the first time for potential solar applications. Dense arrays of silicon NWs o...

We have systematically studied the evolution of the photoluminescence(PL) tuning of porous silicon(PS) by electrochemical etching in various mixed electrolytes. The electrolytes employed as an etchants were mixtures of HF:CH3COOH:HNO3:C2H5OH solutions where the composition ratios (%) were varied from 10:1.98:0:88.02 to 10:1.98:8.4:79.62 under constant concentration of HF and CH3COOH with a tota...

Porous silicon multilayers and microcavities, prepared by the pulsed electrochemical etching method, exhibit a variety of reflectivity and photoluminescence spectra. A comparison of the measured results with those calculated based on the transfer matrix method and quantum-box model reveals that the variation of the spectra can be attributed to the change in wavelength position of the stop-band ...